THEORETICAL ROAD DAMAGE DUE TO DYNAMIC TYRE FORCES OF HEAVY VEHICLES. PART 2: SIMULATED DAMAGE CAUSED BY A TANDEM-AXLE VEHICLE.

The literature relating to road surface failure and design is briefly reviewed and the conventional methods for assessing the road damaging effects of dynamic tire forces are examined. A new time domain technique for analyzing dynamic tire forces and four associated road damage criteria are presented. The force criteria are used to examine the road damaging characteristics of a simple tandem-axle vehicle model for a range of speed and road roughness conditions. It is concluded that for the proposed criteria, the theoretical service life of road surfaces that are prone to fatigue failure may be reduced significantly by the dynamic component of wheel forces. The damage done to approximately five per cent of the road surface area during the passage of a theoretical model vehicle at typical highway speeds may be increased by as much as four times.

Road damage due to dynamic tyre forces measured on a public road

This paper describes a series of tests conducted on a UK trunk road, in which the dynamic tyre forces generated by over 1500 heavy goods vehicles (HGVs) were measured using a load measuring mat containing 144 capacitive strip sensors. The data was used to investigate the relative road damaging potential of the various classes of vehicles, and the degree of spatial repeatability of tyre forces present in a typical highway fleet. Approximately half the vehicles tested were found to contribute to a spatially repeatable pattern of pavement loading. On average, air suspended vehicles were found to generate lower dynamic load coefficients than steel suspended vehicles. However, air suspended vehicles also generated higher mean levels of theoretical road damage (aggregate force) than steel suspended vehicles, indicating that the ranking of suspensions depends on the pavement damage criterion used.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Movement of deposited water on turbomachinery rotor blade surfaces

A theoretical approach for calculating the movement of liquid water following deposition onto a turbomachine rotor blade is described. Such a situation can occur during operation of an aero-engine in rain. The equation of motion of the deposited water is developed on an arbitrarily oriented plane triangular surface facet. By dividing the blade surface into a large number of facets and calculating the water trajectory over each one crossed in turn, the overall trajectory can be constructed. Apart from the centrifugal and Coriolis inertia effects, the forces acting on the water arise from the blade surface friction, and the aerodynamic shear and pressure gradient. Non- dimensionalisation of the equations of motion provides considerable insight and a detailed study of water flow on a flat rotating plate set at different stagger angles demonstrates the paramount importance of blade surface friction. The extreme cases of low and high blade friction are examined and it is concluded that the latter (which allows considerable mathematical generalisation) is the most likely in practice. It is also shown that the aerodynamic shear force, but not the pressure force, may influence the water motion. Calculations of water movement on a low-speed compressor blade and the fan blade of a high bypass ratio aero-engine suggest that in low rotational speed situations most of the deposited water is centrifuged rapidly to the blade tip region. Copyright © 2006 by ASME.

Characterisation and simulation of asphalt road surfaces

Accurate simulation of rolling-tyre vibrations, and the associated noise, requires knowledge of road-surface topology. Full scans of the surface types in common use are, however, not widely available, and are likely to remain so. Ways of producing simulated surfaces from incomplete starting information are thus needed. In this paper, a simulation methodology based solely on line measurements is developed, and validated against a full two-dimensional height map of a real asphalt surface. First the tribological characteristics-asperity height, curvature and nearest-neighbour distributions-of the real surface are analysed. It is then shown that a standard simulation technique, which matches the (isotropic) spectrum and the probability distribution of the height measurements, is unable to reproduce these characteristics satisfactorily. A modification, whereby the inherent granularity of the surface is enforced at the initialisation stage, is introduced, and found to produce simulations whose tribological characteristics are in excellent agreement with the measurements. This method will thus make high-fidelity tyre-vibration calculations feasible for researchers with access to line-scan data only. In addition, the approach to surface tribological characterisation set out here provides a template for efficient cataloguing of road textures, as long as the resulting information can subsequently be used to produce sample realisations. A third simulation algorithm, which successfully addresses this requirement, is therefore also presented. © 2011 Elsevier B.V.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.