Fabrication of large grain Nd-Ba-Cu-O by seeded melt growth

Large, single grain Nd-Ba-Cu-O (NdBCO) composite samples of NdBa2Cu3O7-δ (Nd-123) containing 15 and 20 mol. % non-superconducting Nd4Ba2Cu2O10 (Nd-422) phase inclusions have been fabricated successfully by a variety of techniques based on top-seeded melt growth under reduced oxygen partial pressure. Specifically, individual grains up to 2cm in diameter have been grown using (100) oriented MgO seeding, self (NdBCO) seeding at elevated temperature and self-seeding of Ag and Au doped precursor pellets. The latter exhibit a reduced peritectic decomposition temperature compared with the undoped compound. These techniques, which vary in degree of difficulty and hence reliability, yield grains with a range of microstructural homogeneity. This paper describes the general aspects of large NdBCO grain fabrication and presents the results of the different fabrication techniques.

Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.

Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (Ion/Ioff ratio: 1 × 103; mobility: 0.071 cm2 V-1 s-1). © 2010 IOP Publishing Ltd.

Fabrication and mechanical property of carbon nanotube/metal composites

Carbon nanotubes (CNTs) are known to exhibit extraordinary mechanical properties such as high tensile strength, the highest Young modulus etc. These, combining with their large aspect ratio, make CNTs an excellent additive candidate to complement or substitute traditional carbon black or glass fiber fillers for the development of nano-reinforced composites. CNTs have thus far been used as additives in polymers, ceramics and metals to be pursued on practical applications of their composites. © 2010 IEEE.

Microstructure and superconducting properties of single grains of Y-Ba-Cu-O containing Y-2411(M) and Y2O3

Y-Ba-Cu-O (YBCO) single grains have the potential to generate large trapped magnetic fields for engineering applications, and research on the processing and properties of this material has attracted interest world-wide over the past 20 years. In particular, the introduction of flux pinning centers to the large grain microstructure to improve its current density Jc, and hence trapped field, has been investigated extensively. Y2Ba 4CuMO2 [Y-2411(M)], where M = Nb, Ta, Mo, W, Ru, Zr, Bi and Ag, has been discovered recently to form very effective flux pinning centers due primarily to its ability to form nano-size inclusions in the superconducting phase matrix. However, the addition of the Y-2411(M) phase to the precursor composition complicates the melt-processing of single grains. The addition of Y2O3 to the precursor composition, however, broadens the growth window of single YBCO grains containing Y-2411 (M). We report an investigation of the microstructures and superconducting properties of single grains of this composition grown by top seeded melt growth (TSMG). © 2010 IEEE.

Fabrication and testing of a high resolution extensometer based on resonant MEMS strain sensors

A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork (DETF) sensors bonded on the bar with epoxy glue, one of which is utilized for temperature compensation. Both sensors are driven by a closed loop self-oscillating transresistance amplifier feedback scheme implemented on a PCB (Printed Circuit Board). On the same board, a microcontroller-based frequency measurement circuit is also implemented, which is able to count the square wave fronts of the MEMS oscillator output with a resolution of 20 nsec. The system provides a frequency noise of 0.2 Hz corresponding to an extension resolution of 4 nm for the extensometer. Nearly perfect temperature compensation of the frequency output is achieved in the temperature range 20-35 C using the reference sensor. © 2011 IEEE.

The microstructure and mechanical properties of ball-milled stainless steel powder: The effect of hot-pressing vs. laser sintering

The microstructure and mechanical properties of sintered stainless steel powder, of composition AISI 420, have been measured. Ball-milled powder comprising nanoscale grains was sintered to bulk specimens by two alternative routes: hot-pressing and microlaser sintering. The laser-sintered alloy has a porosity of 6% and comprises a mixture of delta ferrite and tempered martensite, and the relative volume fraction varies along the axis of the specimen due to a thermal cycle that evolves with progressive deposition. In contrast, the hot-pressed alloy has a porosity of 0.7% and exhibits a martensitic lath structure with carbide particles at the boundaries of the prior austenite grains. These differences in microstructure lead to significant differences in mechanical properties. For example, the uniaxial tensile strength of the hot-pressed material is one-half of its compressive strength, due to void initiation at the carbide particles at the prior austenite grain boundaries. Nanoindentation measurements reveal a size effect in hardness and also reveal the sensitivity of hardness to the presence of mechanical polishing and electropolishing. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Fabrication of high-Q film bulk acoustic resonator (FBAR) filters withcarbon nanotube (CNT) electrodes

FBAR devices with carbon nanotube (CNT) electrodes have been developed withthe aim of taking advantage of the low density and high acoustic impedance ofthe CNTs compared to other known materials. The influence of the CNTs on thefrequency response of the FBAR devices was studied by comparing two identicalsets of devices, one set comprised FBARs fabricated with chromium/gold bilayerelectrodes, and the second set comprised FBARs fabricated with CNT electrodes.It was found that the CNTs had a significant effect on attenuating travellingwaves at the surface of the FBARs membranes due to their high elastic stiffness.Finite element analysis of the devices fabricated was carried out using COMSOLMultiphysics, and the numerical results confirmed the experimental resultsobtained. © 2010 IEEE.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.