Field programmable gate array based predictive control system for spacecraft rendezvous in elliptical orbits

Copyright © 2014 John Wiley & Sons, Ltd. Copyright © 2014 John Wiley & Sons, Ltd. Summary A field programmable gate array (FPGA) based model predictive controller for two phases of spacecraft rendezvous is presented. Linear time-varying prediction models are used to accommodate elliptical orbits, and a variable prediction horizon is used to facilitate finite time completion of the longer range manoeuvres, whilst a fixed and receding prediction horizon is used for fine-grained tracking at close range. The resulting constrained optimisation problems are solved using a primal-dual interior point algorithm. The majority of the computational demand is in solving a system of simultaneous linear equations at each iteration of this algorithm. To accelerate these operations, a custom circuit is implemented, using a combination of Mathworks HDL Coder and Xilinx System Generator for DSP, and used as a peripheral to a MicroBlaze soft-core processor on the FPGA, on which the remainder of the system is implemented. Certain logic that can be hard-coded for fixed sized problems is implemented to be configurable online, in order to accommodate the varying problem sizes associated with the variable prediction horizon. The system is demonstrated in closed-loop by linking the FPGA with a simulation of the spacecraft dynamics running in Simulink on a PC, using Ethernet. Timing comparisons indicate that the custom implementation is substantially faster than pure embedded software-based interior point methods running on the same MicroBlaze and could be competitive with a pure custom hardware implementation.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Parameters influencing the maximum controllable current in gate commutated thyristors

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration. © The Institution of Engineering and Technology 2014.