Patterned low temperature copper-rich deposits using inkjet printing

Discrete inkspots of very high copper content were produced using inkjet technology. The reagent disproportionates at low temperature to deposit copper on glass. These deposits were shown to be more than 90% copper by weight by electron probe microanalysis and microbeam Rutherford backscatttering spectroscopy.

A microbeam RBS analysis of low temperature direct-write inkjet deposited copper

Quantitative microbeam Rutherford backscattering (RBS) analysis with a 1.5 MeV 4He+ beam has determined limits on the purity of copper deposited on glass with a novel inkjet process. A tetravinyl silane tetrakisCu(I) 1,1,1,5,5,5-hexafluoroacetylacetonate (TVST[Cu]hfac) complex was heated to 70 °C and jetted onto the glass substrate through a piezoelectric ceramic print head in droplets about 0.5 mm diameter. The substrate temperature was 150 °C. Solid well-formed deposits resulted which have a copper content greater than about 90% by weight. The RBS spectra were analysed objectively using the DataFurnace code, with the assumption that the deposit was CuOx, and the validity of different assumed values of x being tested. The assumptions and the errors of the analysis are critically evaluated. © 2002 Elsevier Science B.V. All rights reserved.

Spontaneous induction of the uniform lying helix alignment in bimesogenic liquid crystals for the flexoelectro-optic effect

Using in-plane electric fields, the electrical induction of the uniform lying helix (ULH) alignment in chiral nematic liquid crystals is reported. This process permits spontaneous induction of the ULH alignment to give an in-plane optic axis, without the need for complex processing. Flexoelectro-optic switching is subsequently obtained by holding the in-plane electrodes at a common voltage and addressing via a third, plane-parallel electrode on a second, or upper, substrate to give a field across the device in the viewing direction. For this device, in optimized bimesogenic materials, we demonstrate full intensity modulation and sub-millisecond response times at typical device temperatures. © 2012 American Institute of Physics.

Low molar mass organosiloxane liquid crystals for telecommunication applications

Mixtures of two proprietary low molar mass organosiloxane liquid crystals were studied in order to improve their alignment and optimize their electro-optic properties for telecommunication applications. Over a certain concentration range, mixtures exhibited an isotropic-chiral smectic A-chiral smectic C (Iso-SmA*-SmC*) phase sequence leading to exceptionally good alignment. At room temperature, the spontaneous polarization of these samples was reduced from 225 nC cm -2 in the pure SmC* liquid crystal to as low as 75 nC cm -2 in the mixture. Within this concentration range, the ferroelectric tilt angle could be varied between 35° and 15°, while the rise time decreased by 69.4%. The rise times were < 45 μs for moderate electric fields of ± 10 V μm -1 in the SmC* phase and ∼ 4 μs, independent of electric field, in the SmA* phase. At λ = 1550 nm, these mixtures exhibited very large extinction ratios of {\sim} 60 dB for binary switching in the SmC* phase and ∼ 55 dB continuous variable attenuation in the SmA* phase. © 2012 IEEE.

Low partial pressure chemical vapor deposition of graphene on copper

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.

Increasing the flexoelastic ratio of liquid crystals using highly fluorinated ester-linked bimesogens.

We present experimental results on the bulk flexoelectric coefficients e and effective elastic coefficients K of non-symmetric bimesogenic liquid crystals when the number of terminal and lateral fluoro substituents is increased. These coefficients are of importance because the flexoelastic ratio e/K governs the magnitude of flexoelectro-optic switching in chiral nematic liquid crystals. The study is carried out for two different types of linkage in the flexible spacer chain that connects the separate mesogenic units: these are either an ether or an ester unit. It is found that increasing the number of fluorine atoms on the mesogenic units typically leads to a small increase in e and a decrease in K, resulting in an enhancement of e/K. The most dramatic increase in e/K, however, is observed when the linking group is changed from ether to ester units, which can largely be attributed to an increase in e. Increasing the number of fluorine atoms does, however, increase the viscoelastic ratio and therefore leads to a concomitant increase in the response time. This is observed for both types of linkage, although the ester-linked compounds exhibit smaller viscoelastic ratios compared with their ether-linked counterparts. Highly fluorinated ester-linked compounds are also found to exhibit lower transition temperatures and dielectric anisotropies. As a result, these compounds are promising materials for use in electro-optic devices.

Photomechanically Induced Phase Transitions in Ferroelectric Liquid Crystals

We report optically induced phase transtions occurring in two different host ferroelectric liquid crystals; SCE13 a multicomponentmixture optimised for room temperature performance, and CE8 a single component liquid crystal. These act as host liquid crystals for a novel guest azo dye, which can be made to photoisomerise using low power density U.V. illumination, resulting in dramatic changes in sample properties. We have shown that the magnitude of spontaneous polarisation of systems can be isothermally and reversibly induced or reduced, with the consequent appearance or disappearance of optical switching hysteresis. We discuss the parameters controlling the behaviour of the systems under U.V. illumination and suggest mechansims by which the transitions may occur. © 1993, Taylor & Francis Group, LLC. All rights reserved.

Production and processing of graphene and 2d crystals

Graphene is at the center of an ever growing research effort due to its unique properties, interesting for both fundamental science and applications. A key requirement for applications is the development of industrial-scale, reliable, inexpensive production processes. Here we review the state of the art of graphene preparation, production, placement and handling. Graphene is just the first of a new class of two dimensional materials, derived from layered bulk crystals. Most of the approaches used for graphene can be extended to these crystals, accelerating their journey towards applications. © 2012 Elsevier Ltd.

Electrical and optical properties of ion implanted SOI-based photonic crystals

We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found. © 2011 IEEE.

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.