Transverse cracking of a simple lap joint under axial load

The failure mode of axially loaded simple, single lap joints formed between thin adherends which are flexible in bending is conventionally described as one of axial peeling. We have observed - using high-speed photography - that it is also possible for failure to be preceded by the separation front, or crack, moving in a transverse direction, i.e. perpendicular to the direction of the axial load. A simple energy balance analysis suggests that the critical load for transverse failure is the same as that for axial separation for both flexible lap joints, where the bulk of the stored elastic energy lies in the adhesive, and structural lap joints in which the energy stored in the adherends dominates. The initiation of the failure is dependent on a local increases in either stress or strain energy to some critical values. In the case of a flexible joint, this will occur within the adhesive layer and the critical site will be close to one of the corners of the joint overlap from which the separation front can proceed either axially or transversely. These conclusions are supported by a finite element analysis of a joint formed between adherends of finite width by a low modulus adhesive. © 2012 Taylor & Francis.

Delayed control of a Moore-Greitzer axial compressor model

Several feedback control laws have appeared in the literature concerning the stabilization of the nonlinear Moore-Greitzer axial compression model. Motivated by magnitude and rate limitations imposed by the physical implementation of the control law, Larsen et al. studied a dynamic implementation of the S-controller suggested by Sepulchre and Kokotović. They showed the potential benefit of implementing the S-controller through a first-order lag: while the location of the closed-loop equilibrium achieved with the static control law was sensitive to poorly known parameters, the dynamic implementation resulted in a small limit cycle at a very desirable location, insensitive to parameter variations. In this paper, we investigate the more general case when the control is applied with a time delay. This can be seen as an extension of the model with a first-order lag. The delay can either be a result of system constraints or be deliberately implemented to achieve better system behavior. The resulting closed-loop system is a set of parameter-dependent delay differential equations. Numerical bifurcation analysis is used to study this model and investigate whether the positive results obtained for the first-order model persist, even for larger values of the delay.

Application of axial discontinuity factors for high conversion water reactors

The paper shows that generating cross sections using three-dimensional geometry and application of axial discontinuity factors are essential requirements for obtaining accurate prediction of criticality and zone average reaction rates in highly heterogeneous RBWR-type systems using computer codes based on diffusion theory approximation. The same methodology as presented here will be used to generate discontinuity factors for each axial interface between fuel assembly zones to ensure preservation of reaction rates in each zone and global multiplication factor. The use of discontinuity factors and three-dimensional cross sections may allow for a coarser energy group structure which is desirable to simplify and speed up transient calculations.

The propagation of acoustic waves in a slowly varying duct with radially sheared axial mean flow

We consider the propagation of acoustic waves along a cylindrical duct carrying radially sheared axial mean flow, in which the duct radius is allowed to vary slowly along the axis. In previous work [A.J. Cooper & N. Peake, Journal of Fluid Mechanics 445 (2001) 207-234.] radially sheared axial mean flow with nonzero swirl in a slowly varying duct was considered, but in this paper we set the swirl to zero, thereby allowing simplification of the calculations of both the mean and unsteady flows. In this approach the acoustic wavenumber and corresponding eigenfunction are determined locally, while the wave amplitude is found by solving an evolution equation along the duct. Sample results are presented, including a case in which, perhaps surprisingly, the number of cut-on modes increases as the duct radius decreases. © 2013 Elsevier Ltd. All rights reserved.

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices. © 2009 American Institute of Physics.

Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth

To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth durations on GaAs nanowires using Au nanoparticles. Through transmission electron microscopy, we have observed the following evolution steps for the InAs growth. (1) In the initial stages of the InAs growth, InAs clusters into a wedge shape preferentially at an edge of the Au/GaAs interface by minimizing Au/InAs interfacial area; (2) with further growth of InAs, the Au particle moves sidewards and then downwards by preserving an interface with GaAs nanowire sidewalls. The lower interfacial energy of Au/GaAs than that of Au/In As is attributed to be the reason for such Au movement. This downward movement of the Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and with further supply of In and As vapor reactants, the Au nanoparticle assists the formation of InAs branches. These observations give some insights into vapor-liquid-solid growth and the formation of kinks in nanowire heterostructures. © 2008 Materials Research Society.

Growth behavior of epitaxial semiconductor axial nanowire heterostructures

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires. © 2008 IEEE.

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material. © 2008 American Institute of Physics.