158-μJ pulses from a single-transverse-mode, large-mode-area erbium-doped fiber amplifier

We report the amplification of 10-100-pJ semiconductor diode pulses to an energy of 158 μJ and peak powers >100 kW in a multistage fiber amplifier chain based on a single-mode, large-mode-area erbium-doped amplifier design. To our knowledge these results represent the highest single-mode pulse energy extracted from any doped-fiber system. © 1997 Optical Society of America.

Post-processing of vertical-cavity surface-emitting lasers for transverse mode and polarization control

The operation on how high quality single-mode operation can be readily attained on etching circles in multimode devices is discussed. Arrays of such spots can also be envisaged. Control of the polarization state is also achieved by use of deep line etches. The output filaments and beam shapes of the conventional multimode vertical cavity surface emitting lasers (VCSEL) is shown to be engineered in terms of their positions, widths, and polarizations by use of focused ion beam etching (FIBE). Several GaAs quantum well top-emitting devices with cavity diameters of 10 μm and 18 μm were investigated.

Gaussian etched single transverse mode vertical-cavity surface-emitting laser

A continuous Gaussian profile matched to the fundamental mode was etched onto the aperture of a vertical cavity surface emitting laser (VCSEL). Single Gaussian spot emission was achieved over the entire operating current range.

Visualization of turbulent wedges under favourable pressure gradients using both shear-sensitive and temperature-sensitive liquid crystals

Turbulent wedges induced by a 3D surface roughness placed in a laminar boundary layer over a flat plate were visualised for the first time using both shear-sensitive and temperature-sensitive liquid crystals. The experiments were carried out at three different levels of favourable pressure gradients. The purpose of this investigation was to examine the spreading angles of the turbulent wedges indicated by their associated surface shear stresses and heat transfer characteristics and hence obtain further insight about the difference in the behaviour of transitional momentum and thermal boundary layers when a streamwise pressure gradient exists. It was shown that under a zero pressure gradient the spreading angles indicated by the two types of liquid crystals are the same, but the difference increases as the level of favourable pressure gradient increases. The result from the present study could have an important implication to the transition modelling of thermal boundary layers over gas turbine blades.

Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors

The successful utilization of an array of silicon on insulator complementary metal oxide semiconductor (SOICMOS) micro thermal shear stress sensors for flow measurements at macro-scale is demonstrated. The sensors use CMOS aluminum metallization as the sensing material and are embedded in low thermal conductivity silicon oxide membranes. They have been fabricated using a commercial 1 μm SOI-CMOS process and a post-CMOS DRIE back etch. The sensors with two different sizes were evaluated. The small sensors (18.5 ×18.5 μm2 sensing area on 266 × 266 μm2 oxide membrane) have an ultra low power (100 °C temperature rise at 6mW) and a small time constant of only 5.46 μs which corresponds to a cut-off frequency of 122 kHz. The large sensors (130 × 130 μm2 sensing area on 500 × 500 μm2 membrane) have a time constant of 9.82 μs (cut-off frequency of 67.9 kHz). The sensors' performance has proven to be robust under transonic and supersonic flow conditions. Also, they have successfully identified laminar, separated, transitional and turbulent boundary layers in a low speed flow. © 2008 IEEE.