HVIC switch for high-frequency power converters

A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

All-optical switching in a vertical coupler space switch employing photocarrier-induced nonlinearity

A novel compact integrated nonlinear optical switch is demonstrated. Using a high-power picosecond pulse of 5-ps pulsewidth and 250-MHz repetition rate, all-optical switching with a contrast ratio of 23 dB has been achieved using an in-fiber input power < 14 dBm (100 pJ/pulse). The switch speed depends on the carrier sweep-out time, which can be reduced to the 10 ps range by either applying a reverse bias or by introduction of carrier recombination centers in the active layer.

On the use of a decimative spectral estimation method based on eigenanalysis and SVD for formant and bandwidth tracking of speech signals

In this paper, a Decimative Spectral estimation method based on Eigenanalysis and SVD (Singular Value Decomposition) is presented and applied to speech signals in order to estimate Formant/Bandwidth values. The underlying model decomposes a signal into complex damped sinusoids. The algorithm is applied not only on speech samples but on a small amount of the autocorrelation coefficients of a speech frame as well, for finer estimation. Correct estimation of Formant/Bandwidth values depend on the model order thus, the requested number of poles. Overall, experimentation results indicate that the proposed methodology successfully estimates formant trajectories and their respective bandwidths.

Using a semiconductor optical amplifier integrated with a pump laser for mid-span spectral inversion and wavelength conversion

A semiconductor optical amplifier monolithically integrated with a distributed feedback pump laser is used for non-degenerate four wave mixing applications. Experimental results are presented which illustrate the use of this compact device for both wavelength conversion and dispersion compensation applications at high data rates.

A single all-optical processor for multiple spectral amplitude code label recognition using four wave mixing

We propose a novel label processor which can recognize multiple spectral-amplitude-code labels using four-wave-mixing sidebands and selective optical filtering. Ten code-labels x 10 Gbps variable-length packets are transmitted over a 200 km single-hop switched network.

21 Port self wavelength switching of 40 Gb/s spectral-amplitude-encoded DPSK signals

Ultrafast self-switching of spectral-amplitude-encoded 40 Gb/s DPSK signals is demonstrated for the first time. Switching between 21 ports with 15nm maximum bin separation is achieved using a single correlator based on HNLF and an AWG. © 2009 IEEE.

The need for winter in the switch to flowering.

Vernalization is the process whereby the floral transition is promoted through exposure of plants to long periods of cold temperature or winter. A requirement for vernalization aligns flowering with the seasons to ensure that their reproductive phase occurs in favorable conditions. The mitotic stability of vernalization, suggestive of an epigenetic mechanism, has intrigued researchers for many years. Genetic analysis of the vernalization requirement in Arabidopsis has identified key floral repressor genes, FRI and FLC. The action of these floral repressors is antagonized by vernalization and the activity of a set of genes grouped into the autonomous floral pathway. Analysis of the vernalization pathway has defined a series of epigenetic regulators crucial for "cellular-memory" of the cold signal, whereas the autonomous pathway appears to function in part through posttranscriptional mechanisms. The mechanism of the vernalization requirement, which is now being explored in a range of plant species, should uncover the evolutionary origins of this key agronomic trait.

Active-passive 44 SOA-based switch with integrated power monitoring

The first monolithically integrated 44 switch with power monitoring function using on-chip PIN photodiodes is reported. Using 10Gb/s signals, under active power control an IPDR of 12dB for a 1dB power penalty is achieved. © 2012 OSA.