TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON.

Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

EXPERIMENTAL TECHNIQUES IN COMBUSTION USE OF IN-CYLINDER IONISATION FOR THE INVESTIGATION AND CONTROL OF SPARK IGNITION ENGINES.

Ions generated during combustion have been used in three ways to give qualitative combustion information. Langmuir type probes have been inserted into the combustion chamber opposite the spark plug location. The centre electrode of the sparking plug itself has been used to produce an ionisation signal from the slightly ionised gases remaining after the flame front has departed. The spark discharge at ignition time has been used as an anemometer.

SUB-BAND CODING TECHNIQUES FOR ROBUST 4. 8 TO 8 kb/s SPEECH CODERS.

This paper describes a speech coding technique that has been developed in order to provide a method of digitising speech at bit rates in the range 4. 8 to 8 kb/s, that is insensitive to the effects of acoustic background noise and bit errors on the digital link. The main aim has been to develop a coding scheme which provides speech quality and robustness against noise and errors that is similar to a 16000 b/s continuously variable slope delta (CVSD) coder, but which operates at half its data rate or less. A desirable aim was to keep the complexity of the coding scheme within the scope of what could reasonably be handled by current signal processing chips or by a single custom integrated circuit. Applications areas include mobile radio and small Satcomms terminals.

Comparison of different scheduling techniques for H-infinity controllers

Several approaches to designing schedule H-infinity control systems are compared. These include a controller switching approach and also parameter scheduling of an observer representation of the controller. They are illustrated by application to a Generic VSTOI. Aircraft Model (GVAM) supplied by The Royal Aerospace Establishment (RAE) at Bedford. The switched design has been tested on the simulator at RAE Bedford. The linear H-infinity designs make use of a loop-shaping followed by robust stabilisation to additive perturbations of a normalised coprime factorisation of the shaped plans. The different scheduling approaches are compared with respect to achieved robust stability levels. performance and complexity of implementation.

Application of domain decomposition and transmission line modelling techniques to 2D, time-domain, finite element problems

In this paper a recently published finite element method, which combines domain decomposition with a novel technique for solving nonlinear magnetostatic finite element problems is described. It is then shown how the method can be extended to, and optimised for, the solution of time-domain problems. © 1999 IEEE.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.