Individual grain boundary properties and overall performance of metal-organic-deposition coated conductors

We have investigated single grain boundaries (GBs) isolated in coated conductors produced by Metal-Organic Deposition (MOD). When a magnetic field is swept in the film plane, an angle-dependent crossover from boundary to grain limited critical current density Jc is found. In the force-free orientation, even at fields as high as 8 T, the GBs still limit Jc. We deduce that this effect is a direct consequence of GB meandering. We have employed these single GB results to explain the dependence of Jc of polycrystalline tracks on their width: in-plane measurements become flatter as the tracks are narrowed down. This result is consistent with the stronger GB limitation at field configurations close to force-free found from the isolated boundaries. Our study shows that for certain geometries even at high fields the effect of GBs cannot be neglected.

Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Stretching-assembled nanowires for organic-based thin film transistors

We demonstrate a stretched contact-printing technique to assemble one-dimensional nanostructures with controlled density and orientation. Over 90% nanowires are highly aligned along the primary stretching direction. Specifically, The hybrid inorganic-organic TFTs based on a parallel-aligned nanowire network and a semiconducting polymer reveal a significant positive enhancement in transistor performance and air-stability.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.

Effect of process parameters on the morphology and nanostructure of roll-to-roll printed P3HT:PCBM thin films for organic photovoltaics

Roll-to-roll (R2R) gravure exhibits significant advantages such as high precision and throughput for the printing of photoactive and conductive materials and the fabrication of flexible organic electronics such as organic photovoltaics (OPVs). Since the photoactive layer is the core of the OPV, it is important to investigate and finally control the process parameters and mechanisms that define the film morphology in a R2R process. The scope of this work is to study the effect of the R2R gravure printing and drying process on the nanomorphology and nanostructure of the photoactive P3HT:PCBM thin films printed on PEDOT:PSS electrodes towards the fabrication of indium tin oxide (ITO)-free flexible OPVs. In order to achieve this, P3HT:PCBM blends of different concentration were R2R printed under various speeds on the PEDOT:PSS layers. Due to the limited drying time during the rolling, an amount of solvent remains in the P3HT:PCBM films and the slow-drying process takes place which leads to the vertical and lateral phase separation, according to the Spectroscopic Ellipsometry and Atomic Force Microscopy analysis. The enhanced slow-drying leads to stronger phase separation, larger P3HT crystallites according to the Grazing Incidence X-Ray Diffraction data and to weaker mechanical response as it was shown by the nanoindentation creep. However, in the surface of the films the P3HT crystallization is controlled by the impinged hot air during the drying, where the more the drying time the larger the surface P3HT crystallites. The integration of the printed P3HT:PCBM and PEDOT:PSS layers in an OPV device underlined the feasibility of fabricating ITO-free flexible OPVs by R2R gravure processes. © 2013 Elsevier B.V.

The dynamic effect of a piled-foundation building on an incident vibration field from an underground railway tunnel

This paper presents a three-dimensional comprehensive model for the calculation of vibration in a building based on pile-foundation due to moving trains in a nearby underground tunnel. The model calculates the Power Spectral Density (PSD) of the building's responses due to trains moving on floating-slab tracks with random roughness. The tunnel and its surrounding soil are modelled as a cylindrical shell embedded in half-space using the well-known PiP model. The building and its piles are modelled as a 2D frame using the dynamic stiffness matrix. Coupling between the foundation and the ground is performed using the theory of joining subsystems in the frequency domain. The latter requires calculations of transfer functions of a half-space model. A convenient choice based on the thin-layer method is selected in this work for the calculations of responses in a half-space due to circular strip loadings. The coupling considers the influence of the building's dynamics on the incident wave field from the tunnel, but ignores any reflections of building's waves from the tunnel. The derivation made in the paper shows that the incident vibration field at the building's foundation gets modified by a term reflecting the coupling and the dynamics of the building and its foundation. The comparisons presented in the paper show that the dynamics of the building and its foundation significantly change the incident vibration field from the tunnel and they can lead to loss of accuracy of predictions if not considered in the calculation.