Yielding of engineering polymers at strain rates of up to 500 s-1

A method is described for measuring the mechanical properties of polymers in compression at strain rates in the range approximately 300-500 s-1. A gravity-driven pendulum is used to load a specimen on the end of an instrumented Hopkinson output bar and the results are processed by a microcomputer. Stress-strain curves up to high strains are presented for polycarbonate, polyethersulphone and high density polyethylene over a range of temperatures. The value of yield stress, for all three polymers, was found to vary linearly with log (strain rate) at strain rates up to 500 s-1. © 1985.

Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

Effect of blade tip geometry on the tip leakage flow in axial turbine cascades

The phenomenon of tip leakage has been studied in two linear cascades of turbine blades. The investigation includes an examination of the performance of the cascades with a variety of tip geometries. The effects of using plain tips, suction side squealers, and pressure side squealers are reported. Traverses of the exit flow field were made in order to determine the overall performance. A method of calculating the tip discharge coefficients for squealer geometries is put forward. In linking the tip discharge coefficient and cascade losses, a procedure for predicting the relative performance of tip geometries is developed. The model is used to examine the results obtained using the different tip treatments and to highlight the important aspects of the loss generation process.