Design method of an innovative motor for an intra-aortic ventricular assist device

A permanent-magnet motor has been designed for an innovative axial-flow ventricular assist device (VAD), to be placed in the descending aorta, intended to offload the left ventricle and augment renal perfusion in patients with congestive heart failure (CHF). For this application, an intra-aortic impeller with a built-in permanent magnet rotor is driven by an extraaortic stator working in synchronism with the natural heart. To meet this need, a two-dimensional analytical model has been developed in the MATLAB environment to estimate machine parameters; finite element analysis (FEA) has been used to refine the results. A prototype blood pump equipped with an innovative motor designed from the procedure above has been tested in a mock loop representing the human circulatory system. The performance of VAD incorporating the motor is presented. © 2009 IEEE.

CHANGES IN PREDICTED MOS DEVICE CHARACTERISTICS DUE TO THE USE OF TWO DIMENSIONAL SOURCE/DRAIN PROFILES.

Two-dimensional MOS device simulation programs such as MINIMOS left bracket 1 right bracket are limited in their validity due to assumptions made in defining the initial two-dimensional source/drain profiles. The two options available to define source/drain regions both construct a two-dimensional profile from one-dimensional profiles normal to the surface. Inaccuracies in forming these source/drain profiles can be expected to effect predicted device characteristics as channel dimensions of the device are reduced. This paper examines these changes by interfacing numerically similated two dimensional source/drain profiles to MINIMOS and comparing predicted I//D-V//D characteristics with 2-D interfacing, 2-D profiles constructed from interfaced 1-D profiles and MINIMOS self generated profiles. Data obtained for simulations of 3 mu m N and P channel devices are presented.

A microfluidic device for high density hydrodynamic cell trapping, growth and super-resolution imaging

Super-Resolution imaging techniques such as Fluorescent Photo-Activation Localisation Microscopy (FPALM) have created a powerful new toolkit for investigating living cells, however a simple platform for growing, trapping, holding and controlling the cells is needed before the approach can become truly widespread. We present a microfluidic device formed in polydimethylsiloxane (PDMS) with a fluidic design which traps cells in a high-density array of wells and holds them very still throughout the life cycle, using hydrodynamic forces only. The device meets or exceeds all the necessary criteria for FPALM imaging of Schizosaccharomyces pombe and is designed to remain flexible, robust and easy to use. © 2011 IEEE.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Effects of multi-scattering on the performance of a single-beam acoustic manipulation device.

The effects of multiple scattering on acoustic manipulation of spherical particles using helicoidal Bessel-beams are discussed. A closed-form analytical solution is developed to calculate the acoustic radiation force resulting from a Bessel-beam on an acoustically reflective sphere, in the presence of an adjacent spherical particle, immersed in an unbounded fluid medium. The solution is based on the standard Fourier decomposition method and the effect of multi-scattering is taken into account using the addition theorem for spherical coordinates. Of particular interest here is the investigation of the effects of multiple scattering on the emergence of negative axial forces. To investigate the effects, the radiation force applied on the target particle resulting from a helicoidal Bessel-beam of different azimuthal indexes (m = 1 to 4), at different conical angles, is computed. Results are presented for soft and rigid spheres of various sizes, separated by a finite distance. Results have shown that the emergence of negative force regions is very sensitive to the level of cross-scattering between the particles. It has also been shown that in multiple scattering media, the negative axial force may occur at much smaller conical angles than previously reported for single particles, and that acoustic manipulation of soft spheres in such media may also become possible.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. © 2012 Tan et al.

Variable repetition rate monolithically integrated mode-locked-laser- modulator-MOPA device

A monolithically integrated MLLD-modulator-MOPA is presented generating 12.5 ps pulses. The Mach-Zehnder modulator allows tunable repetition rates from 14 GHz to 109 MHz, and the MOPA boosts the peak power by 3.2 dB. © 2012 IEEE.

Design consideration of a circular type magnetic flux pump device

As a variation of the thermally actuated flux pump and the linear type magnetic flux pump (LTMFP), the circular type magnetic flux pump (CTMFP) device is proposed to magnetize a circular shape type-II superconducting thin film and bulk. The basic concept is the same as the thermally actuated flux pump: a circularly symmetric traveling magnetic field is generated below a circular shape superconductor to increase its trapping field. However, this traveling field is created by the three phase windings instead of heating gadolinium block. Apart from the LTMFP, the three phase windings are wound concentrically instead of linearly. The speed of the traveling field is controlled by the AC frequency and the magnitude of the field is controlled by the magnitudes of AC currents. In addition, a coil with DC current is wound around the three phase windings to provide a background field. The concept design is presented in this paper. The magnetic waveforms are analysed numerically by the COMSOL 3.5a software. The impedances of the three phase windings are calculated and a corresponding circuit design is presented. This rig can be used as an advanced tool to study the flux pump behavior of a circular shape superconductor. © 2002-2011 IEEE.

Radiation Concentrator Device

A radiation concentrator device 21 for improved efficiency in solar systems by limiting reflected light, comprising a radiation concentrator element 27 comprising a radiation transmissive surface 29, a radiation receiving device and disposed on the incident radiation side of the concentrator element 27 is a recapture element 23 for recapturing at least a portion of radiation lost from the concentrator element 27, where the recapturing element allows transmission of incident light into the concentrator element 27, recaptures escaping radiation from the concentrator element and reflecting the radiation back into the concentrator element. Also disclosed are radiation concentrator device 21 where the recapture element 23 comprises ridged or grooved structures to increase the internal reflection of the radiation. The concentrator element 27 may also be provided with luminescent materials.

Electronic device with self-aligned electrodes fabricated using additive liquid deposition

The invention provides a multilayer electronic device having electrodes, formed on a laterally extending first layer, the lateral position of each of at least two adjacent electrodes being defined by a channel in the first layer. Each channel is adjacent a deposition region, the material which forms each electrode substantially covering the deposition region to form a continuous conductive structure.