Series-connected IGBTs using active voltage control technique

With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance Cgc, that dominate transient voltage sharing. As Cgc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV\ce/dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dVce/dt. Switching losses associated with this technique are minimized by the adaptive dv /dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique. © 2012 IEEE.

Use of a high-temperature superconducting coil for magnetic energy storage

A high temperature superconducting magnetic energy storage device (SMES) has been realised using a 350 m-long BSCCO tape wound as a pancake coil. The coil is mounted on a cryocooler allowing temperatures down to 17.2 K to be achieved. The temperature dependence of coil electrical resistance R(T) shows a superconducting transition at T 102.5 K. Measurements of the V(I) characteristics were performed at several temperatures between 17.2 K and 101.5 K to obtain the temperature dependence of the critical current (using a 1 νV/cm criterion). Critical currents were found to exceed 100 A for T < 30 K. An electronic DC-DC converter was built in order to control the energy flow in and out of the superconducting coil. The converter consists of a MOS transistor bridge switching at a 80 kHz frequency and controlled with standard Pulse Width Modulation (PWM) techniques. The system was tested using a 30 V squared wave power supply as bridge input voltage. The coil current, the bridge input and output voltages were recorded simultaneously. Using a 10 A setpoint current in the superconducting coil, the whole system (coil + DC-DC converter) can provide a stable output voltage showing uninterruptible power supply (UPS) capabilities over 1 s. © 2006 IOP Publishing Ltd.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

A comparative study of transistors based on wurtzite and zincblende InAs nanowires

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE.

Thyristors

Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type material (i.e. three p-n junctions) comprising its main power handling section. In contrast to the linear relation which exists between load and control currents in a transistor, the thyristor is bistable. The control terminal of the thyristor, called the gate (G) electrode, may be connected to an integrated and complex structure as a part of the device. Thyristors are used to approximate ideal closed (no voltage drop between anode and cathode) or open (no anode current flow) switches for control of power flow in a circuit. This differs from low-level digital switching circuits that are designed to deliver two distinct small voltage levels while conducting small currents (ideally zero). Thyristor circuits must have the capability of delivering large currents and be able to withstand large externally applied voltages. All thyristor types are controllable in switching from a forward-lockingstate (positive potential applied to the anode with respect to the cathode, with correspondingly little anode current flow) into a forward-conduction state (large forward anode current flowing, with a small anode-cathode potential drop). Most thyristors have the characteristic that after switching from a forward-blocking state into the forward-conduction state, the gate signal can be removed and the thyristor will remain in its forward-conduction mode. This property is termed "latching" and is an important distinction between thyristors and other types of power electronic devices. © 2007 Elsevier Inc. All rights reserved.

Polychromatic single-shot spectroscopy on SOI-FET trapped electrons

The behavior of trapped electrons, in a dielectric close to the channel of a silicon SOI-FET, is studied by cryogenic microwave spectroscopy. On-resonance microwave excitation causes one of these trapped electrons to undergo spatial Rabi oscillations between widely separated trap sites. This charge displacement causes a change in the drain current of the transistor, resulting in high quality factor resonances in continuous wave spectroscopy. The potential of this effect for non-classical information processing is investigated through polychromatic single-shot spectroscopy, using on-resonance and difference frequencies. Interaction between different trapped electrons is seen in the post excitation behavior and the possibilities of quantum gate operations are discussed. © The Electrochemical Society.

Stretching-assembled nanowires for organic-based thin film transistors

We demonstrate a stretched contact-printing technique to assemble one-dimensional nanostructures with controlled density and orientation. Over 90% nanowires are highly aligned along the primary stretching direction. Specifically, The hybrid inorganic-organic TFTs based on a parallel-aligned nanowire network and a semiconducting polymer reveal a significant positive enhancement in transistor performance and air-stability.

Effect of bandgap narrowing on performance of modern power devices

The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected. © 2013 IEEE.

Direct detection of molecular biorecognition by dipole sensing mechanism.

This work investigates the feasibility of transducing molecular-recognition events into a measurable potentiometric signal. It is shown for the first time that biorecognition of acetylcholine (ACh) can be translated to conformational changes in the enzyme, acetylcholine-esterase (AChE), which in turn induces a measurable change in surface potential. Our results show that a highly sensitive detector for ACh can be obtained by the dilute assembly of AChE on a floating gate derived field effect transistor (FG-FET). A wide concentration range response is observed for ACh (10(-2)-10(-9)M) and for the inhibitor carbamylcholine CCh (10(-6)-10(-11)M). These enhanced sensitivities are modeled theoretically and explained by the combined response of the device to local pH changes and molecular dipole variations due to the enzyme-substrate recognition event.

Highly efficient detector of the neurotransmitter ACh and AChE inhibitors

Among the variety of applications for biosensors one of the exciting frontiers is to utilize those devices as post-synaptic sensing elements in chemical coupling between neurons and solid-state systems. The first necessary step to attain this challenge is to realize highly efficient detector for neurotransmitter acetylcholine (ACh). Herein, we demonstrate that the combination of floating gate configuration of ion-sensitive field effect transistor (ISFET) together with diluted covalent anchoring of enzyme acetylcholinesterase (AChE) onto device sensing area reveals a remarkable improvement of a four orders of magnitude in dose response to ACh. This high range sensitivity in addition to the benefits of peculiar microelectronic design show, that the presented hybrid provides a competent platform for assembly of artificial chemical synapse junction. Furthermore, our system exhibits clear response to eserine, a competitive inhibitor of AChE, and therefore it can be implemented as an effective sensor of pharmacological reagents, organophosphates, and nerve gases as well. © 2007 Materials Research Society.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

Optimising the dynamic performance of an all-wide-bandgap cascode switch

A SPICE simulation model of a novel cascode switch that combines a high voltage normally-on silicon carbide (SiC) junction field effect transistor (JFET) with a low voltage enhancement-mode gallium nitride field effect transistor (eGaN FET) has been developed, with the aim of optimising cascode switching performance. The effect of gate resistance on stability and switching losses is investigated and optimum values chosen. The effects of stray inductance on cascode switching performance are considered and the benefits of low inductance packaging discussed. The use of a positive JFET gate bias in a cascode switch is shown to reduce switching losses as well as reducing on-state losses. The findings of the simulation are used to produce a list of priorities for the design and layout of wide-bandgap cascode switches, relevant to both SiC and GaN high voltage devices. © 2013 IEEE.

Multi-walled carbon nanotube conductivity enhancement and band gap widening via rapid pulsed thermal annealing

Herein we report on the transport characteristics of rapid pulsed vacuum-arc thermally annealed, individual and network multi-walled carbon nanotubes. Substantially reduced defect densities (by at least an order of magnitude), measured by micro-Raman spectroscopy, and were achieved by partial reconstruction of the bamboo-type defects during thermal pulsing compared with more traditional single-pulse thermal annealing. Rapid pulsed annealed processed networks and individual multi-walled nanotubes showed a consistent increase in conductivity (of over a factor of five at room temperature), attributed to the reduced number density of resistive axial interfaces and, in the case of network samples, the possible formation of structural bonds between crossed nanotubes. Compared to the highly defective as-grown nanotubes, the pulsed annealed samples exhibited reduced temperature sensitivity in their transport characteristics signifying the dominance of scattering events from structural defects. Transport measurements in the annealed multi-walled nanotubes deviated from linear Ohmic, typically metallic, behavior to an increasingly semiconducting-like behavior attributed to thermally induced axial strains. Rapid pulsed annealed networks had an estimated band gap of 11.26 meV (as-grown; 6.17 meV), and this observed band gap enhancement was inherently more pronounced for individual nanotubes compared with the networks most likely attributed to mechanical pinning effect of the probing electrodes which possibly amplifies the strain induced band gap. In all instances the estimated room temperature band gaps increased by a factor of two. The gating performance of back-gated thin-film transistor structures verified that the observed weak semiconductivity (p-type) inferred from the transport characteristic at room temperature. © 2014 Copyright Taylor & Francis Group, LLC.

Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis

Different FIB-based sample preparation methods for atom probe analysis of transistors have been proposed and discussed. A special procedure, involving device deprocessing, has been used to analyze by APT a sub-30 nm transistor extracted from a SRAM device. The analysis provides three dimensional compositions of Ni-silicide contact, metal gate and high-k oxide of the transistor gate. © 2013 Elsevier B.V. All rights reserved.

Pt redistribution in N-MOS transistors during Ni salicide process

Atom probe tomography was used to study the redistribution of platinum during Ni(10 at.%Pt) silicidation of n-doped polycrystalline Si. These measurements were performed after the two annealing steps of standard salicide process both on a field-effect transistor and on unpatterned region submitted to the same process. Very similar results are obtained in unpatterned region and in transistor gate contact. The first phase to form is not the expected δ-Ni2Si but the non stoichiometric θ-Ni2Si. Pt redistribution is strongly influenced by this phase and the final distribution is different from what is reported in literature. © 2013 Elsevier B.V. All rights reserved.