202 resultados para Solution-processed Photovoltaic


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The sound emission from open turbulent flames is dictated by the two-point spatial correlation of rate of change of fluctuating heat release rate and this correlation has not been investigated directly in the past studies. Turbulent premixed flame data from DNS and laser diagnostics are analyzed to study this correlation function and the two-point spatial correlation of the fluctuating heat release rate. This shows that the correlation functions have simple Gaussian forms whose integral length scale is related to the laminar flame thickness and amplitude depends on the spatial distribution of the time-mean rate of heat release. These results and RANS-CFD solution of open turbulent premixed flames are post-processed to obtain the far field SPL, which agrees well with measured values. © 2010 by the American Institute of Aeronautics and Astronautics, Inc.

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This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

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This paper presents a numerical method for the simulation of flow in turbomachinery blade rows using a solution-adaptive mesh methodology. The fully three-dimensional, compressible, Reynolds-averaged Navier-Stokes equations with k-ε turbulence modeling (and low Reynolds number damping terms) are solved on an unstructured mesh formed from tetrahedral finite volumes. At stages in the solution, mesh refinement is carried out based on flagging cell faces with either a fractional variation of a chosen variable (like Mach number) greater than a given threshold or with a mean value of the chosen variable within a given range. Several solutions are presented, including that for the highly three-dimensional flow associated with the corner stall and secondary flow in a transonic compressor cascade, to demonstrate the potential of the new method.

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Crystal growth of melt-textured Nd-123 pseudo-crystals was investigated via an isothermal solidification with top-seeding technique under a 1%O2 in N2 atmosphere. Non-steady state solidification was observed at low undercooling, in contrast to an almost linear growth at higher undercooling. Similar to processing in air, the substitution of Nd/Ba was found to decrease from the seed position to the edge of the crystal. In addition, the volume fraction of Nd-422 particles decreased in the solid as solidification proceeded. As a result of these microstructural inhomogeneities, the critical temperature and the critical current density varied within the crystal even for samples processed isothermally, despite the narrow solid solution range of the Nd-123 phase under a reduced pO2 atmosphere.

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Accurate and efficient computation of the nearest wall distance d (or level set) is important for many areas of computational science/engineering. Differential equation-based distance/ level set algorithms, such as the hyperbolic-natured Eikonal equation, have demonstrated valuable computational efficiency. Here, in the context, as an 'auxiliary' equation to the main flow equations, the Eikonal equation is solved efficiently with two different finite volume approaches (the cell vertex and cell-centered). Application of the distance solution is studied for various geometries. Moreover, a procedure using the differential field to obtain the medial axis transform (MAT) for different geometries is presented. The latter provides a skeleton representation of geometric models that has many useful analysis properties. As an alternative approach to the pure geometric methods (e.g. the Voronoi approach), the current d-MAT procedure bypasses many difficulties that are usually encountered by pure geometric methods, especially in three dimensional space. It is also shown that the d-MAT approach provides the potential to sculpt/control the MAT form for specialized solution purposes. Copyright © 2010 by the American Institute of Aeronautics and Astronautics, Inc.

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An implementation of the inverse vector Jiles-Atherton model for the solution of non-linear hysteretic finite element problems is presented. The implementation applies the fixed point method with differential reluctivity values obtained from the Jiles-Atherton model. Differential reluctivities are usually computed using numerical differentiation, which is ill-posed and amplifies small perturbations causing large sudden increases or decreases of differential reluctivity values, which may cause numerical problems. A rule based algorithm for conditioning differential reluctivity values is presented. Unwanted perturbations on the computed differential reluctivity values are eliminated or reduced with the aim to guarantee convergence. Details of the algorithm are presented together with an evaluation of the algorithm by a numerical example. The algorithm is shown to guarantee convergence, although the rate of convergence depends on the choice of algorithm parameters. © 2011 IEEE.