1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study

Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-μm wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AIGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.

Measurement of polarisation dependent all-optical nonlinearity in GaAs/AlGaAs quantum well waveguides far from the bandedge

The all-optical nonlinearity of a quantum well waveguide is studied by measuring the intensity dependent transmission through a Fabry-Perot cavity formed around the guide. Values for the nonlinear refractive index coefficient, η 2, at a wavelength of 1.06μm are obtained for light whose polarisation is either parallel or perpendicular to the quantum well layers. A simple measurement to estimate the two photon absorption coefficient, B2, using relatively low optical power levels is also described.

Efficient InGaAsP/InP multiple quantum well optical phase modulator for the 1.5-1.55μm fiber band

We report an InGaAsP/InP MQW phase modulator operating over the entire 1.55μm fiber band with high phase modulation efficiency and low loss modulation. The spectral dependence of the electro-refraction in a MQW structure is measured for the first time.

Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 μm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses. © 2003 Optical Society of America.

Low penalty cascaded operation of a monolithically integrated Quantum Dot 1×8 port optical switch

A novel Quantum Dot monolithically integrated 1×8 switch is shown to provide robust routing of data at 10Gb/s modulation rates. Two cascaded switches providing, 1×64 functionality, operate with a power penalty of only 0.9dB. © VDE VERLAG GMBH.