Framework for integration of informal waste management sector with the formal sector in Pakistan.

Historically, waste pickers around the globe have utilised urban solid waste as a principal source of livelihood. Formal waste management sectors usually perceive the informal waste collection/recycling networks as backward, unhygienic and generally incompatible with modern waste management systems. It is proposed here that through careful planning and administration, these seemingly troublesome informal networks can be integrated into formal waste management systems in developing countries, providing mutual benefits. A theoretical framework for integration based on a case study in Lahore, Pakistan, is presented. The proposed solution suggests that the municipal authority should draw up and agree on a formal work contract with the group of waste pickers already operating in the area. The proposed system is assessed using the integration radar framework to classify and analyse possible intervention points between the sectors. The integration of the informal waste workers with the formal waste management sector is not a one dimensional or single step process. An ideal solution might aim for a balanced focus on all four categories of intervention, although this may be influenced by local conditions. Not all the positive benefits will be immediately apparent, but it is expected that as the acceptance of such projects increases over time, the informal recycling economy will financially supplement the formal system in many ways.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Fabrication and integration of horizontally aligned carbon nanotube C60 films for UV sensors

Carbon nanotubes (CNTs) are promising for microsystems applications, yet few techniques effectively enable integration of CNTs with precise control of placement and alignment of the CNTs at sufficiently high densities necessary for compelling mechanical or electrical performance. This paper explores new methods for scalable integration of dense, horizontally aligned (HA) CNTs with patterned electrodes. Our technique involves the synthesis of vertically aligned (VA) CNTs directly on a conductive underlayer and subsequent mechanical transformation into HA-CNTs, thus making electrical contact between two electrodes. We compare elasto-capillary folding and mechanical rolling as methods for transforming VA-CNTs, which lead to distinctly different HA-CNT morphologies and potentially impact material and device properties. As an example application of this novel CNT morphology, we investigate fabrication of electrically addressable CNT-C60 hybrid thin films that we previously demonstrated as photodetectors. We synthesize these assemblies by crystallizing C60 from dispersion on HA-CNT thin-film scaffoldings. HA-CNTs fabricated by rolling result in relatively low packing density, so C 60 crystals embed inside the HA-CNT matrix during synthesis. On the other hand, C60 crystallization is restricted to near the surface of HA-CNT films made by the elasto-capillary process. © 2013 IEEE.

Electro-optic integration of liquid crystal cladding switch with multimode passive polymer waveguides on PCB

Optical switching functionality is demonstrated in PCB integrated multimode passive polymer waveguides using a localised liquid-crystal cladding structure. Waveguide switching contrast of 15 dB is achieved with only 0.5 dB of on-state excess loss. © 2009 OSA.

Framework for integration of informal waste management sector with the formal sector in Pakistan

Historically, waste pickers around the globe have utilised urban solid waste as a principal source of livelihood. Formal waste management sectors usually perceive the informal waste collection/recycling networks as backward, unhygienic and generally incompatible with modern waste management systems. It is proposed here that through careful planning and administration, these seemingly troublesome informal networks can be integrated into formal waste management systems in developing countries, providing mutual benefits. A theoretical framework for integration based on a case study in Lahore, Pakistan, is presented. The proposed solution suggests that the municipal authority should draw up and agree on a formal work contract with the group of waste pickers already operating in the area. The proposed system is assessed using the integration radar framework to classify and analyse possible intervention points between the sectors. The integration of the informal waste workers with the formal waste management sector is not a one dimensional or single step process. An ideal solution might aim for a balanced focus on all four categories of intervention, although this may be influenced by local conditions. Not all the positive benefits will be immediately apparent, but it is expected that as the acceptance of such projects increases over time, the informal recycling economy will financially supplement the formal system in many ways. © The Author(s) 2013.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Novel regrowth-free vertical active-passive integration scheme with improved fabrication tolerance

We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.

Novel regrowth-free vertical active-passive integration scheme with improved fabrication tolerance

We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.

Novel regrowth-free vertical active-passive integration scheme with improved fabrication tolerance

We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.

Technology management tools: Generalization, integration and configuration

Managers in technology-intensive businesses need to make decisions in complex and dynamic environments. Many tools, frameworks and processes have been developed to support managers in these situations, leading to a proliferation of such approaches, with little consistency in terminology or theoretical foundation, and a lack of understanding of how such tools can be linked together to tackle management challenges in an integrated way. As a step towards addressing these issues, this paper proposes the concept of an integrated 'toolkit', incorporating generalized forms of three core technology management tools that support strategic planning (roadmapping, portfolio analysis and linked analysis grids). © 2006 World Scientific Publishing Company.

Negative Effects of Relative Proximity and Absolute Geography on Open Innovation Practices in High-tech SMEs in the UK

© 2014 IEEE. This exploratory study addresses a gap in management literature by addressing the role of location in the continuously expanding field of open innovation research. In this context, we analyze potential negative effects of absolute geography and relative proximity on open innovation practices in high-tech small and medium-sized enterprises (SMEs) in the United Kingdom. Drawing upon cluster theory and business ecosystem literature, the analysis from three SME case studies in the East of England suggests that presumed 'favorable' location variables, such as close relative proximity between partners and the presence of economic clusters, can have certain negative effects on open innovation practices.