138 resultados para Metalorganic chemical vapor deposition (MOCVD)
Resumo:
Graphene grown by Chemical Vapor Deposition (CVD) on nickel subsrate is oxidized by means of oxygen plasma and UV/Ozone treatments to introduce bandgap opening in graphene. The degree of band gap opening is proportional to the degree of oxidation on the graphene. This result is analyzed and confirmed by Scanning Tunnelling Microscopy/Spectroscopy and Raman spectroscopy measurements. Compared to conventional wet-oxidation methods, oxygen plasma and UV/Ozone treatments do not require harsh chemicals to perform, allow faster oxidation rates, and enable site-specific oxidation. These features make oxygen plasma and UV/Ozone treatments ideal candidates to be implemented in high-throughput fabrication of graphene-based microelectronics. © 2011 Materials Research Society.
Resumo:
We show that catalyst pretreatment conditions can have a profound effect on the chiral distribution in single-walled carbon nanotube chemical vapor deposition. Using a SiO2-supported cobalt model catalyst and pretreatment in NH3, we obtain a comparably narrowed chiral distribution with a downshifted tube diameter range, independent of the hydrocarbon source. Our findings demonstrate that the state of the catalyst at the point of carbon nanotube nucleation is of fundamental importance for chiral control, thus identifying the pretreatment atmosphere as a key parameter for control of diameter and chirality distributions. © 2014 American Chemical Society.
Resumo:
A model of the graphene growth mechanism of chemical vapor deposition on platinum is proposed and verified by experiments. Surface catalysis and carbon segregation occur, respectively, at high and low temperatures in the process, representing the so-called balance and segregation regimes. Catalysis leads to self-limiting formation of large area monolayer graphene, whereas segregation results in multilayers, which evidently "grow from below." By controlling kinetic factors, dominantly monolayer graphene whose high quality has been confirmed by quantum Hall measurement can be deposited on platinum with hydrogen-rich environment, quench cooling, tiny but continuous methane flow and about 1000°C growth temperature. © 2014 AIP Publishing LLC.