Ferroelectric liquid crystal mixture integrated into optical waveguides

We report an on-chip integrated ferroelectric liquid crystal (FLC) waveguide structure suitable for telecommunication applications. Single gaps with different widths of 5, 10, and 20 μ m inside individual silica waveguides were filled with an FLC mixture. The waveguide devices operate as a binary switch or an attenuator in a temperature range from 30 °C to 60 °C. The FLC mixture exhibited a good alignment quality in these gaps without alignment layers. A good extinction ratio of up to 33.9 dB and a low insertion loss of <4.3 dB at λ = 1550 nm were observed. Switching times of <100 μs were obtained for the low electric fields applied in this experiment. © 2012 IEEE.

Photomechanically Induced Phase Transitions in Ferroelectric Liquid Crystals

We report optically induced phase transtions occurring in two different host ferroelectric liquid crystals; SCE13 a multicomponentmixture optimised for room temperature performance, and CE8 a single component liquid crystal. These act as host liquid crystals for a novel guest azo dye, which can be made to photoisomerise using low power density U.V. illumination, resulting in dramatic changes in sample properties. We have shown that the magnitude of spontaneous polarisation of systems can be isothermally and reversibly induced or reduced, with the consequent appearance or disappearance of optical switching hysteresis. We discuss the parameters controlling the behaviour of the systems under U.V. illumination and suggest mechansims by which the transitions may occur. © 1993, Taylor & Francis Group, LLC. All rights reserved.

Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal

We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.

Influence of specific HSP70 domains on fibril formation of the yeast prion protein Ure2.

Ure2p is the protein determinant of the Saccharomyces cerevisiae prion state [URE3]. Constitutive overexpression of the HSP70 family member SSA1 cures cells of [URE3]. Here, we show that Ssa1p increases the lag time of Ure2p fibril formation in vitro in the presence or absence of nucleotide. The presence of the HSP40 co-chaperone Ydj1p has an additive effect on the inhibition of Ure2p fibril formation, whereas the Ydj1p H34Q mutant shows reduced inhibition alone and in combination with Ssa1p. In order to investigate the structural basis of these effects, we constructed and tested an Ssa1p mutant lacking the ATPase domain, as well as a series of C-terminal truncation mutants. The results indicate that Ssa1p can bind to Ure2p and delay fibril formation even in the absence of the ATPase domain, but interaction of Ure2p with the substrate-binding domain is strongly influenced by the C-terminal lid region. Dynamic light scattering, quartz crystal microbalance assays, pull-down assays and kinetic analysis indicate that Ssa1p interacts with both native Ure2p and fibril seeds, and reduces the rate of Ure2p fibril elongation in a concentration-dependent manner. These results provide new insights into the structural and mechanistic basis for inhibition of Ure2p fibril formation by Ssa1p and Ydj1p.

Silver paint as a soldering agent for DyBaCuO single-domains welding

Silver paint has been tested as a soldering agent for DyBaCuO single-domain welding. Junctions have been manufactured on Dy-Ba-Cu-O single-domains cut either along planes parallel to the c-axis or along the ab-planes. Microstructural and superconducting characterisations of the samples have been performed. For both types of junctions, the microstructure in the joined area is very clean: no secondary phase or Ag particles segregation has been observed. Electrical and magnetic measurements for all configurations of interest are reported $\rho(T)$ curves, and Hall probe mapping). The narrow resistive superconducting transition reported for all configurations shows that the artificial junction does not affect significantly the measured superconducting properties of the material.

Investigation of DyBa2Cu3O7-d superconducting domains grown by the infiltration technique starting with small size Dy-211 particles

An infiltration and growth process is here used as an alternative to the classical top-seeded melt-textured growth process for the production of Dy-123 single-domains with finely dispersed small size Dy-211 particles. The starting materials are the 211-particles and a barium and copper rich liquid phase precursor. The infiltration and growth process allows for controlling both the spatial and size distribution of the 211-particles in the final superconducting 123-single-domain. The main parameters (set-ups, maximum processing temperature with respect to the peritectic temperature, nature of reactant, porosity of the 211-preform) of the infiltration and growth process are discussed. Moreover, different processes of chimie douce are shown in order to produce Dy-211 particles with controlled shape and size, particles that can be used as precursors for the infiltration and growth process. © 2005 IOP Publishing Ltd.

Influence of specific HSP70 domains on fibril formation of the yeast prion protein Ure2.

Ure2p is the protein determinant of the Saccharomyces cerevisiae prion state [URE3]. Constitutive overexpression of the HSP70 family member SSA1 cures cells of [URE3]. Here, we show that Ssa1p increases the lag time of Ure2p fibril formation in vitro in the presence or absence of nucleotide. The presence of the HSP40 co-chaperone Ydj1p has an additive effect on the inhibition of Ure2p fibril formation, whereas the Ydj1p H34Q mutant shows reduced inhibition alone and in combination with Ssa1p. In order to investigate the structural basis of these effects, we constructed and tested an Ssa1p mutant lacking the ATPase domain, as well as a series of C-terminal truncation mutants. The results indicate that Ssa1p can bind to Ure2p and delay fibril formation even in the absence of the ATPase domain, but interaction of Ure2p with the substrate-binding domain is strongly influenced by the C-terminal lid region. Dynamic light scattering, quartz crystal microbalance assays, pull-down assays and kinetic analysis indicate that Ssa1p interacts with both native Ure2p and fibril seeds, and reduces the rate of Ure2p fibril elongation in a concentration-dependent manner. These results provide new insights into the structural and mechanistic basis for inhibition of Ure2p fibril formation by Ssa1p and Ydj1p.

Measurement of Residual Stresses in Ferroelectric Pb(Zr

The residual stresses in Pb(Zr0.3Ti0.7)O3thin films were measured by the \sin^{2}\Psi method using the normal X-ray incidence. The spacing of different planes (hkl) parallel to the film surface were converted to the spacing of a set of inclined planes (100). The angles between (100) and (hkl) were equivalent to the tilting angles of (100) from the normal of film surface. The residual stresses were extracted from the linear slope of the strain difference between the equivalent inclined direction and normal direction with respect to the \sin^{2}\Psi. The results were in consistency with that derived from the conventional \sin^{2}\Psi method.

Polarization switching induced decrease of bulk resistivity in ferroelectric Pb(Zr0.45Ti0.55)O3 thin films and a method to improve their fatigue endurance

Significant reduction of the bulk resistivity in a ferroelectric Pb(Zr 0.45Ti0.55)O3 thin film is observed before the remnant polarization started to decrease noticeably at the onset of its fatigue switching process. It is associated with the increase of charge carriers within the central bulk region of the film. The decrease of bulk resistivity would result in the increase of Joule heating effect, improving the temperature of the thin film, which is evaluated by the heat conduction analysis. The Joule heating effect in turn accelerates the polarization reduction, i.e. fatigue. Enhancing the heat dissipation of a ferroelectric capacitor is shown to be able to improve the device's fatigue endurance effectively. © 2013 Chinese Physical Society and IOP Publishing Ltd.

Measurement of residual stresses in ferroelectric Pb(Zr 0.3Ti0.7)O3 thin films by X-ray diffraction

The residual stresses in Pb(Zr0.3Ti0.7)O3 thin films were measured by the sin2 Ψ method using the normal X-ray incidence. The spacing of different planes (hkl) parallel to the film surface were converted to the spacing of a set of inclined planes (100). The angles between (100) and (hkl) were equivalent to the tilting angles of (100) from the normal of film surface. The residual stresses were extracted from the linear slope of the strain difference between the equivalent inclined direction and normal direction with respect to the sin2 Ψ. The results were in consistency with that derived from the conventional sin2 Ψ method. © 2013 The Japan Society of Applied Physics.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼105, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 104 s. © 2014 AIP Publishing LLC.

Free space adaptive optical interconnect, using a ferroelectric liquid crystal SLM for beam steering

A free-space, board-to-board, adaptive optical interconnect demonstrator has been developed. Binary phase gratings displayed on a Ferroelectric Liquid Crystal Spatial Light Modulator are used to maintain data transfer at 1.25Gbps, given varying optical misalignment.© 2005 Optical Society of America.