Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentration and energy level) and electron density in the channel in AlGaN/GaN heterostructures. This analysis was then correlated to dc and pulsed measurements of the transfer characteristics of a MISFET, where the gate bias was found to modulate either the channel density or the donor states. Traps-free and traps-frozen TCAD simulations were performed on an equivalent device to capture the donor behavior. A donor concentration of 1.14× 1013 ∼ cm-2 with an energy level located 0.2 eV below the conduction band edge gave the best fit to measurements. With the approach described here, we were able to analyze the region of the MISFET that corresponds to the drift region of a conventional HEMT. © 1980-2012 IEEE.

A fracture criterion for the notch strength of high strength steels in the presence of hydrogen

High strength steels can suffer from a loss of ductility when exposed to hydrogen, and this may lead to sudden failure. The hydrogen is either accommodated in the lattice or is trapped at defects, such as dislocations, grain boundaries and carbides. The challenge is to identify the effect of hydrogen located at different sites upon the drop in tensile strength of a high strength steel. For this purpose, literature data on the failure stress of notched and un-notched steel bars are re-analysed; the bars were tested over a wide range of strain rates and hydrogen concentrations. The local stress state at failure has been determined by the finite element (FE) method, and the concentration of both lattice and trapped hydrogen is predicted using Oriani's theory along with the stress-driven diffusion equation. The experimental data are rationalised in terms of a postulated failure locus of peak maximum principal stress versus lattice hydrogen concentration. This failure locus is treated as a unique material property for the given steel and heat treatment condition. We conclude that the presence of lattice hydrogen increases the susceptibility to hydrogen embrittlement whereas trapped hydrogen has only a negligible effect. It is also found that the observed failure strength of hydrogen charged un-notched bars is less than the peak local stress within the notched geometries. Weakest link statistics are used to account for this stressed volume effect. © 2013 Elsevier Ltd.

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

Sub-kHz RF electrical linewidth from a 10GHz passively mode-locked quantum-dot laser diode

A packaged 10GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narrow 500Hz RF electrical linewidth for passive mode-locking. Single sideband noise spectra show 147fs integrated timing jitter over the 4MHz-80MHz frequency range. © 2009 Optical Society of America.

Electrical properties of LiNbO3 (electrolyte)/Cu (anode) bi-layers

In this work specific film structures of Li-Nb-O/Li/Li-Nb-O are investigated by AC Impedance Spectroscopy measurements at different temperatures. This gives the opportunity to investigate properties of the material itself and, at the same time, to consider the influence of the grain boundaries on the ionic behavior of the polycrystalline Lithium Niobate. On the other hand, LiNbO3/Li/Cu multi-layers are studied as electrolyte/anode bi-layers and potential parts of "Li-free" microbatteries. The Li deficiency in the as deposited Li-Nb-O films is cured by forming a "sandwich" of Li-Nb-O/Li/Li-Nb-O, which after annealing becomes ionic conductor. The electrical behavior of an annealed film depends on two sources. The first is due to properties of the material itself and the second is based on the network of the grain boundaries. The average size of the grains is strongly influenced by the structure of the ohmic-contact/substrate. The electrical behavior of the electrolyte/anode interface of the "Li-free" structure LiNbO3/Li/Cu/Au is very similar to the impedance measurements of the single LiNbO3 single films. The whole multilayer structure, though, presents a third relaxation time which is consistent of a small resistance. This resistance is independent of temperature and it seems that is due to the metallic interface Li/Cu/Au. © 2010 Elsevier B.V. All rights reserved.

Electrical addressing of polymer stabilized hyper-twisted chiral nematic liquid crystals with interdigitated electrodes: Experiment and model

Electro-optic switching in short-pitch polymer stabilized chiral nematic liquid crystals was studied and the relative contributions of flexoelectric and dielectric coupling were investigated: polymer stabilization was found to effectively suppress unwanted textural transitions of the chiral nematic liquid crystal and thereby enhance the electro-optical performance (high optical contrast for visible light, a near ideal optical hysteresis, fast electro-optic response). Test cells were studied that possessed interdigitated electrodes to electrically address the liquid crystal. Based on simulations, a well-fitted phenomenological description of the electro-optic response was derived considering both flexoelectro-optic and Kerr-effect based electro-optic response. © 2014 AIP Publishing LLC.

Electrical control of nanoscale functionalization in graphene by the scanning probe technique

Functionalized graphene is a versatile material that has well-known physical and chemical properties depending on functional groups and their coverage. However, selective control of functional groups on the nanoscale is hardly achievable by conventional methods utilizing chemical modifications. We demonstrate electrical control of nanoscale functionalization of graphene with the desired chemical coverage of a selective functional group by atomic force microscopy (AFM) lithography and their full recovery through moderate thermal treatments. Surprisingly, our controlled coverage of functional groups can reach 94.9% for oxygen and 49.0% for hydrogen, respectively, well beyond those achieved by conventional methods. This coverage is almost at the theoretical maximum, which is verified through scanning photoelectron microscope measurements as well as first-principles calculations. We believe that the present method is now ready to realize 'chemical pencil drawing' of atomically defined circuit devices on top of a monolayer of graphene. © 2014 Nature Publishing Group All rights reserved.