Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Enhanced flexoelectric switching behaviour in the chiral nematic phase

In order to develop materials that exhibit enhanced flexoelectric switching in the chiral nematic phase we have identified mesogenic units that display inherently strong flexoelectric coupling capabilities. Here we examine the oxycyanobiphenyl (OCB) moiety: homologues from the nOCB series exhibit significant electro-optic switching effects when doped with a highly chiral additive. Here we have examined lower dielectric anisotropy materials, since they allow the flexoelectric response to be extended to high field amplitudes. We show that dielectric coupling strength can be low in symmetric bimesogenic molecules. The flexoelectric response of such a molecular structure is tested by doping a homologue from the series CBOnOCB with a chiral additive: very significantly we find that the optic axis is rotated through 2φ=45° in <50 μs on reversing the polarity of the field (amplitude E=±6 V μm-1). Subsequently we have synthesized room temperature chiral nematic materials that exhibit 2φ≥90° at E≈10 V μm-1. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.