234 resultados para viscous material removal


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The mechanisms of material removal were studied during the erosion of two unfilled elastomers (natural rubber and epoxidised natural rubber). The effects of impact velocity and of lubrication by silicone oil were investigated. The development of surface features due to single impacts and during the early stages of erosion was followed by scanning electron microscopy. The basic material removal mechanism at impact angles of both 30° and 90° involves the formation and growth of fine fatigue cracks under the tensile surface stresses caused by impact. No damage was observed after single impacts; it was found that many successive impacts are necessary for material removal. It was found that the erosion rate has a very strong dependance on impact velocity above about 50 ms-1.

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The mechanisms of material removal were investigated during the erosive wear of a glass-ceramic. The effects of erodent particle shape, velocity and angle were studied. Single impacts and incremental erosion tests were performed, to study the development of surface features and to elucidate the mechanisms of material removal. It was found that transitions in mechanism occurred which depended on the particle shape, impact velocity and impact angle. The mechanisms of material removal, for erosion by silica sand, changed from fine scale fracture and plastic processes below a transition point to large-scale cracking of the surface above. Spherical glass beads caused wear dominated by fatigue, with a very strong dependence of wear rate on the impact conditions. This work indicates that laboratory erosion testing of glass-ceramic and other brittle materials should reflect the conditions present in practice, and that account must be taken of possible changes in wear mechanisms.

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The dramatic increase in hole quality on single crystalline silicon with an 1 μm fiber laser has been reported recently, it redefines the processing options for Si at that wavelength. This study investigated the effects of the MOPA based pulse tuning on the changes of the machined depth and the mass removal mechanism for the generation of microvia holes. Hole depths were measured and surface morphology studied using SEM and optical interferometric profilometry. The pulse peak power was found to strongly influence the material removal mechanism with fixed pulse duration. High peak powers (>1 kW) gave vaporization dominated ablation, left a limited re solidified molten layer and clean hole formation. The pulse duration was found to strongly influence the machined depth. Longer pulse durations generated deeper holes with constant peak power (>1 kW). In comparison with the DPSS UV laser, the IR fiber laser of longer pulse durations machined deeper holes and generated less resolidifed melt beyond the hole rim at high fluencies. The comparison suggests that some applications (microvia drilling) of the DPSS UV laser can be replaced with the more flexible, low cost IR fiber laser. © KSPE and Springer 2012.

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A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650μm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm2 and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 μm was achieved using a 200 ns pulse of 13.3 J/cm 2, giving a maximum machining efficiency of 31.86 μm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.

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Non-conventional methods of machining are used for many engineering applications where the traditional processes fail to be cost-effective. Such processes include Ion Beam Machining (IBM), focused ion beam (FIB) machining and plasma discharge machining. The mechanisms of material removal and associated hardware and software developed for industrial applications of these fascinating electro-physical and chemical machining processes are reviewed together with the latest research findings. © 2009 CIRP.

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Of all laser-based processes, laser machining has received little attention compared with others such as cutting, welding, heat treatment and cleaning. The reasons for this are unclear, although much can be gained from the development of an effcient laser machining process capable of processing diffcult materials such as high-performance steels and aerospace alloys. Existing laser machining processes selectively remove material by melt shearing and evaporation. Removing material by melting and evaporation leads to very low wall plug effciencies, and the process has difficulty competing with conventional mechanical removal methods. Adopting a laser machining solution for some materials offers the best prospects of effcient manufacturing operations. This paper presents a new laser machining process that relies on melt shear removal provided by a vertical high-speed gas vortex. Experimental and theoretical studies of a simple machining geometry have identifed a stable vortex regime that can be used to remove laser-generated melt effectively. The resultant combination of laser and vortex is employed in machining trials on 43A carbon steel. Results have shown that laser slot machining can be performed in a stable regime at speeds up to 150mm/min with slot depths of 4mm at an incident CO2 laser power level of 600 W. Slot forming mechanisms and process variables are discussed for the case of steel. Methods of bulk machining through multislot machining strategies are also presented.

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We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

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Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

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A constitutive equation is developed for geometrically-similar sharp indentation of a material capable of elastic, viscous, and plastic deformation. The equation is based on a series of elements consisting of a quadratic (reversible) spring, a quadratic (time-dependent, reversible) dashpot, and a quadratic (time-independent, irreversible) slider-essentially modifying a model for an elastic-perfectly plastic material by incorporating a creeping component. Load-displacement solutions to the constitutive equation are obtained for load-controlled indentation during constant loading-rate testing. A characteristic of the responses is the appearance of a forward-displacing "nose" during unloading of load-controlled systems (e.g., magnetic-coil-driven "nanoindentation" systems). Even in the absence of this nose, and the associated initial negative unloading tangent, load-displacement traces (and hence inferred modulus and hardness values) are significantly perturbed on the addition of the viscous component. The viscous-elastic-plastic (VEP) model shows promise for obtaining material properties (elastic modulus, hardness, time-dependence) of time-dependent materials during indentation experiments.