Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.

BEHAVIOUR OF FIXED CANTILEVER WALLS SUBJECT TO LATERAL SHAKING.

A programme of research on the seismic behaviour of retaining walls has been under way at Cambridge since 1981. Centrifuge tests have presently been conducted both on cantilever walls and isolated mass walls, retaining dry sands of varying grading and density. This paper is devoted to the modelling of fixed-base cantilever walls retaining Leighton Buzzard (14/25) sand of relative density 99% with a horizontal surface level with the crest of the wall. The base of the centrifuge container was used to fix the walls, and to provide a rigid lower boundary for the sand. No attempt was made to inhibit the propagation of compression waves from the side of the container opposite the inside face of the model wall. The detailed analysis of dynamic deflections and bending moments was made difficult by the anelastic nature of reinforced concrete, and the difficulty of measuring bending strains thereon. A supplementary programme of well-instrumented tests on Dural walls of similar stiffness, including the modelling of models, was therefore carried out. Refs.

Study of the turbulence in the air-side and water-side boundary layers in experimental laboratory wind induced surface waves

This study detailed the structure of turbulence in the air-side and water-side boundary layers in wind-induced surface waves. Inside the air boundary layer, the kurtosis is always greater than 3 (the value for normal distribution) for both horizontal and vertical velocity fluctuations. The skewness for the horizontal velocity is negative, but the skewness for the vertical velocity is always positive. On the water side, the kurtosis is always greater than 3, and the skewness is slightly negative for the horizontal velocity and slightly positive for the vertical velocity. The statistics of the angle between the instantaneous vertical fluctuation and the instantaneous horizontal velocity in the air is similar to those obtained over solid walls. Measurements in water show a large variance, and the peak is biased towards negative angles. In the quadrant analysis, the contribution of quadrants Q2 and Q4 is dominant on both the air side and the water side. The non-dimensional relative contributions and the concentration match fairly well near the interface. Sweeps in the air side (belonging to quadrant Q4) act directly on the interface and exert pressure fluctuations, which, in addition to the tangential stress and form drag, lead to the growth of the waves. The water drops detached from the crest and accelerated by the wind can play a major role in transferring momentum and in enhancing the turbulence level in the water side.On the air side, the Reynolds stress tensor's principal axes are not collinear with the strain rate tensor, and show an angle α σ≈=-20°to-25°. On the water side, the angle is α σ≈=-40°to-45°. The ratio between the maximum and the minimum principal stresses is σ a/σ b=3to4 on the air side, and σ a/σ b=1.5to3 on the water side. In this respect, the air-side flow behaves like a classical boundary layer on a solid wall, while the water-side flow resembles a wake. The frequency of bursting on the water side increases significantly along the flow, which can be attributed to micro-breaking effects - expected to be more frequent at larger fetches. © 2012 Elsevier B.V.

Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

High temperature direct double side cooled inverter module for hybrid electric vehicle application

In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.

Fabrication of self-aligned side gates to carbon nanotubes

We have fabricated self-aligned, side-gated suspended multi-walled carbon nanotubes (MWCNTs), with nanotube-to-gate spacing of less than 10 nm. Evaporated metal forms an island on a suspended MWCNT, the island and the nanotube act as a mask shielding the substrate, and lift-off then removes the metal island, leaving a set of self-aligned side gates. Al, Cr, Au, and Ti were investigated and the best results were obtained with Cr, at a yield of over 90%.