A high temperature SOI CMOS NO2 sensor

For more than 20 years researchers have been interested in developing micro-gas sensors based on silicon technology. Most of the reported devices are based on micro-hotplates, however they use materials that are not CMOS compatible, and therefore are not suitable for large volume manufacturing. Furthermore, they do not allow the circuitry to be integrated on to the chip. CMOS compatible devices have been previously reported. However, these use polysilicon as the heater material, which has long term stability problems at high temperatures. Here we present low power, low cost SOI CMOS NO2 sensors, based on high stability single crystal silicon P+ micro-heaters platforms, capable of measuring gas concentrations down to 0.1 ppm. We have integrated a thin tungsten molybdenum oxide layer as a sensing material with a foundry-standard SOI CMOS micro-hotplate and tested this to NO2. We believe these devices have the potential for use as robust, very low power consumption, low cost gas sensors. © 2011 American Institute of Physics.

Modelling material transfer in metal rolling using plasticine

Plasticine strips are rolled between cylindrical rollers to model the phenomenon of material transfer in metal rolling. Strips of thin plastic film ('clingfilm') on the plasticine strip are used to model the oxide layer that covers the surface of aluminium. The effect of gaps opening up between the clingfilm strips is investigated. It is found that the percentage area of the exposed strip giving rise to transfer of material increases with the gap width. The evidence strongly suggests that plasticine particles transferred to the rolls are able to pick off plasticine from the strip on successive passes. Larger plasticine particles are more likely to show this behaviour and consequently grow in size. The results confirm the usefulness of plasticine as a suitable material to investigate transfer layer formation in metal rolling, and help inform development of experimental procedures to study the evolution of real metal transfer layers. © 2007 Elsevier B.V. All rights reserved.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Tensile response of passivated films with climb-assisted dislocation glide

The tensile response of single crystal films passivated on two sides is analysed using climb enabled discrete dislocation plasticity. Plastic deformation is modelled through the motion of edge dislocations in an elastic solid with a lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation incorporated through a set of constitutive rules. The dislocation motion in the films is by glide-only or by climb-assisted glide whereas in the surface passivation layers dislocation motion occurs by glide-only and penalized by a friction stress. For realistic values of the friction stress, the size dependence of the flow strength of the oxidised films was mainly a geometrical effect resulting from the fact that the ratio of the oxide layer thickness to film thickness increases with decreasing film thickness. However, if the passivation layer was modelled as impenetrable, i.e. an infinite friction stress, the plastic hardening rate of the films increases with decreasing film thickness even for geometrically self-similar specimens. This size dependence is an intrinsic material size effect that occurs because the dislocation pile-up lengths become on the order of the film thickness. Counter-intuitively, the films have a higher flow strength when dislocation motion is driven by climb-assisted glide compared to the case when dislocation motion is glide-only. This occurs because dislocation climb breaks up the dislocation pile-ups that aid dislocations to penetrate the passivation layers. The results also show that the Bauschinger effect in passivated thin films is stronger when dislocation motion is climb-assisted compared to films wherein dislocation motion is by glide-only. © 2012 Elsevier Ltd.

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

Thermal shock resistance of air plasma sprayed thermal barrier coatings

The spallation resistance of an air plasma sprayed (APS) thermal barrier coating (TBC) to cool-down/reheat is evaluated for a pre-existing delamination crack. The delamination emanates from a vertical crack through the coating and resides at the interface between coating and underlying thermally grown oxide layer (TGO). The coating progressively sinters during engine operation, and this leads to a depth-dependent increase in modulus. Following high temperature exposure, the coating is subjected to a cooling/reheating cycle representative of engine shut-down and start-up. The interfacial stress intensity factors are calculated for the delamination crack over this thermal cycle and are compared with the mode-dependent fracture toughness of the interface between sintered APS and TGO. The study reveals the role played by microstructural evolution during sintering in dictating the spallation life of the thermal barrier coating, and also describes a test method for the measurement of delamination toughness of a thin coating. © 2014 Elsevier Ltd.

Investigating the hydrothermal growth of zinc oxide nanostructures through seed layer control

Controlling the growth of ZnO nanostructures for photovoltaic applications will ensure greater device efficiency and parameter control. This paper reports on methods to engineer the morphology and tailor the nanostructure growth direction through the hydrothermal synthesis method. Effective control is achieved through the use of a sputtered zinc layer together with modifications of the growth solution. These nanostructures have been developed with a view to incorporation into excitonic solar cells, and methods to improve surface stability using a fully aqueous synthesis method will be discussed. © by Oldenbourg Wissenschaftsverlag, München.