Understanding the kink formation in GaAs/InAs heterostructural nanowires

The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. © 2006 IEEE.

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE.

Convective heat dissipation with lattice-frame materials

This paper presents experimental results on heat transfer and pressure drop for a compact heat sink made of fully triangulated, lightweight (porosity∼0.938), aluminum lattice-frame materials (LFMs). Due to the inherent structural anisotropy of the LFMs, two mutually perpendicular orientations were selected for the measurements. Constant heat flux was applied to the heat sink under steady state conditions, and dissipated by forced air convection. The experimental data were compared with those predicted from an analytical model based on fin analogy. The experimental results revealed that pressure drop is strongly dependent upon the orientation of the structure, due mainly to the flow blockage effect. For heat transfer measurements, typical local temperature distributions on the substrate under constant heat flux conditions were captured with infrared camera. The thermal behavior of LFMs was found to follow closely that of cylinder banks, with early transition Reynolds number (based on strut diameter) equal to about 300. The Nusselt number prediction from the fin-analogy correlates well with experimental measurements, except at low Reynolds numbers where a slightly underestimation is observed. Comparisons with empty channels and commonly used heat exchanger media show that the present LFM heat sink can remove heat approximately seven times more efficient than an empty channel and as efficient as a bank of cylinders at the same porosity level. The aluminum LFMs are extremely stiff and strong, making them ideal candidates for multifunctional structures requiring both heat dissipation and mechanical load carrying capabilities. © 2003 Elsevier Ltd. All rights reserved.