Materials science: The ultrasmoothness of diamond-like carbon surfaces

The ultrasmoothness of diamond-like carbon coatings is explained by an atomistic/continuum multiscale model. At the atomic scale, carbon ion impacts induce downhill currents in the top layer of a growing film. At the continuum scale, these currents cause a rapid smoothing of initially rough substrates by erosion of hills into neighboring hollows. The predicted surface evolution is in excellent agreement with atomic force microscopy measurements. This mechanism is general, as shown by similar simulations for amorphous silicon. It explains the recently reported smoothing of multilayers and amorphous transition metal oxide films and underlines the general importance of impact-induced downhill currents for ion deposition, polishing, and nanopattering.

Ink-jet printing for patterning engineering surfaces

This work explored the use of industrial drop-on-demand inkjet printing for masking steel surfaces on engineering components, followed by chemical etching, to produce patterned surfaces. A solvent-based ink was printed on to mild steel samples and the influences of substrate topography and substrate temperature were investigated. Contact angle measurements were used to assess wettability. Regular patterns of circular spots (∼60 /on diameter) and more complex mask patterns were printed. Variation of the substrate temperature had negligible effect on the final size of the printed drops or on the resolution achieved. Colored optical interference fringes were observed on the dried ink deposits and correlated with film thickness measurements by whitelight interferometry.

Characterisation and simulation of asphalt road surfaces

Accurate simulation of rolling-tyre vibrations, and the associated noise, requires knowledge of road-surface topology. Full scans of the surface types in common use are, however, not widely available, and are likely to remain so. Ways of producing simulated surfaces from incomplete starting information are thus needed. In this paper, a simulation methodology based solely on line measurements is developed, and validated against a full two-dimensional height map of a real asphalt surface. First the tribological characteristics-asperity height, curvature and nearest-neighbour distributions-of the real surface are analysed. It is then shown that a standard simulation technique, which matches the (isotropic) spectrum and the probability distribution of the height measurements, is unable to reproduce these characteristics satisfactorily. A modification, whereby the inherent granularity of the surface is enforced at the initialisation stage, is introduced, and found to produce simulations whose tribological characteristics are in excellent agreement with the measurements. This method will thus make high-fidelity tyre-vibration calculations feasible for researchers with access to line-scan data only. In addition, the approach to surface tribological characterisation set out here provides a template for efficient cataloguing of road textures, as long as the resulting information can subsequently be used to produce sample realisations. A third simulation algorithm, which successfully addresses this requirement, is therefore also presented. © 2011 Elsevier B.V.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.

Frequency diversity measurements at 2.4 GHz for wireless sensor networks deployed in tunnels

Wireless Sensor Networks (WSNs) which utilise IEEE 802.15.4 technology operate primarily in the 2.4 GHz globally compatible ISM band. However, the wireless propagation channel in this crowded band is notoriously variable and unpredictable, and it has a significant impact on the coverage range and quality of the radio links between the wireless nodes. Therefore, the use of Frequency Diversity (FD) has potential to ameliorate this situation. In this paper, the possible benefits of using FD in a tunnel environment have been quantified by performing accurate propagation measurements using modified and calibrated off-the-shelf 802.15.4 based sensor motes in the disused Aldwych underground railway tunnel. The objective of this investigation is to characterise the performance of FD in this confined environment. Cross correlation coefficients are calculated from samples of the received power on a number of frequency channels gathered during the field measurements. The low measured values of the cross correlation coefficients indicate that applying FD at 2.4 GHz will improve link performance in a WSN deployed in a tunnel. This finding closely matches results obtained by running a computational simulation of the tunnel radio propagation using a 2D Finite-Difference Time-Domain (FDTD) method. ©2009 IEEE.