Electron spin resonance signature of the oxygen vacancy in HfO 2

The oxygen vacancy has been inferred to be the critical defect in HfO 2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be g xx = 1.918, g yy = 1.926, g zz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion. © 2012 American Institute of Physics.

Innovative capabilities, entrepreneurial process and the dynamic growth of university spin-outs: A process-oriented study with evidence from China

This research aims to develop a conceptual framework in order to enquire into the dynamic growth process of University Spin-outs (hereafter referred to as USOs) in China, attempting to understand the capabilities configuration that are necessary for the dynamic growth. Based on the extant literature and empirical cases, this study attempts to address the question how do USOs in China build and configure the innovative capabilities to cope with the dynamic growth. This paper aims to contribute to the existing literature by providing a theoretical discussion of the USOs' dynamic entrepreneurial process, by investigating the interconnections between innovation problem-solving and the required configuration of innovative capabilities in four growth phases. Further, it presents a particular interest on the impact to the USOs' entrepreneurial innovation process by the integrative capabilities, in terms of knowledge integration, alliance, venture finance and venture governance. To date, studies that have investigated the dynamic development process of USOs in China and have recognized the heterogeneity of USOs in terms of capabilities that are required for rapid growth still remain sparse. Addressing this research gap will be of great interest to entrepreneurs, policy makers, and venture investors. ©2009 IEEE.