Polychromatic single-shot spectroscopy on SOI-FET trapped electrons

The behavior of trapped electrons, in a dielectric close to the channel of a silicon SOI-FET, is studied by cryogenic microwave spectroscopy. On-resonance microwave excitation causes one of these trapped electrons to undergo spatial Rabi oscillations between widely separated trap sites. This charge displacement causes a change in the drain current of the transistor, resulting in high quality factor resonances in continuous wave spectroscopy. The potential of this effect for non-classical information processing is investigated through polychromatic single-shot spectroscopy, using on-resonance and difference frequencies. Interaction between different trapped electrons is seen in the post excitation behavior and the possibilities of quantum gate operations are discussed. © The Electrochemical Society.

Indirect modulation of a terahertz quantum cascade laser using gate tunable graphene

We bring together two areas of terahertz (THz) technology that have benefited from recent advancements in research, i.e., graphene, a material that has plasmonic resonances in the THz frequency, and quantum cascade lasers (QCLs), a compact electrically driven unipolar source of THz radiation. We demonstrate the use of single-layer large-area graphene to indirectly modulate a THz QCL operating at 2.0 THz. By tuning the Fermi level of the graphene via a capacitively coupled backgate voltage, the optical conductivity and, hence, the THz transmission can be varied. We show that, by changing the pulsing frequency of the backgate, the THz transmission can be altered. We also show that, by varying the pulsing frequency of the backgate from tens of Hz to a few kHz, the amplitude-modulated THz signal can be switched by 15% from a low state to a high state. © 2009-2012 IEEE.

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

Room temperature magnetic quantum cellular automata

All computers process information electronically. A processing method based on magnetism is reported here, in which networks of interacting submicrometer magnetic dots are used to perform logic operations and propagate information at room temperature. The logic states are signaled by the magnetization direction of the single-domain magnetic dots; the dots couple to their nearest neighbors through magnetostatic interactions. Magnetic solitons carry information through the networks, and an applied oscillating magnetic field feeds energy into the system and serves as a clock. These networks offer a several thousandfold increase in integration density and a hundredfold reduction in power dissipation over current microelectronic technology.