Nanostructuring of materials for device and sensor applications

The recent developments in nanotechnology are reviewed, with particular emphasis on its application in microsystem technology where increased reliability is achieved by integrating the sensor and the readout electronics on the same substrate. New applications may be possible using integrated micromechanical clips to connect optic fibers and components in integrated silicon systems. Some of the key developments in enabling technologies are also described, including the control of thin film deposition, nanostructuring to tailor the properties of thin film, silicon micromachining to make sensors, and microclips for the low-cost assembly of integrated optical microsystems.

PASREG 2003: International workshop on processing and applications of superconducting (RE)BCO large grain materials

This issue of Superconductor Science and Technology is edited by Murakami, M., Cardwell, D.A., Salama, K., Krabbes, G., Habisreuther, T. and Gawalek, W. It contains 42 selected papers from the PASREG 2003 international workshop, held in Jena, Germany, 30 June - 2 July 2003. The workshop was organised by the Institut fur Physikalische Hochtechnologie, Jena, Germany and was the fourth in the series of workshops first held in Cambridge, UK, in 1997.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.