Magnetic sensor with compensation for lead and coil resistance

A measurement system for magnetic fields or electric currents uses a single-core fluxgate, magneto-inductive or magneto-impedance device driven from a radio frequency excitation source. Flux nulling feedback circuitry is provided to maintain the core of the sensor at substantially zero net flux and improve the linearity and dynamic response of the sensor system. A high pass filter is provided for reducing the dc effects of the ohmic resistance of the coil and lead wires on the effectiveness of the flux nulling feedback.

Fluxgate magnetic sensor with overload detection

A measurement system for magnetic fields and electric currents uses a single-core fluxgate device driven with a radio frequency excitation source and is provided with a means to indicate saturation of the core of the sensor. A means is provided for detecting overload of the sensor as the core approaches continuous saturation using a pair of demodulators and a comparator.

Micro-electro-mechanical resonant tilt sensor with 250 nano-radian resolution

This paper reports a high-resolution frequency-output MEMS tilt sensor based on resonant sensing principles. The tilt sensor measures orientation by sensing the component of gravitational acceleration along a specified input axis. A combination of design enhancements enables significantly higher sensitivity for this device as compared to previously reported prototype sensors. The MEMS tilt sensor is calibrated on a manual tilt table over tilt angles ranging over 0-90 degrees with a relatively linear response measured in the range of ±20°(linearity error <2.3%) with a scale factor of approximately 50.06 Hz/degree. The noise-limited resolution of the sensor is found to be approximately 250 nano-radians for an integration time of 0.8 s, which is over an order of magnitude better than previously reported results [1]. © 2013 IEEE.

A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

A dual mode SOI CMOS MEMS based thermal conductivity and IR absorption gas sensor

Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700°C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices. © 2013 IEEE.