Simple model of electronic density of states of graphite and its application to the investigation of superlattices

A model of graphite which is easy to comprehend and simple to implement for the simulation of scanning tunneling microscopy (STM) images is described. This model simulates the atomic density of graphite layers, which in turn correlates with the local density of states. The mechanism and construction of such a model is explained with all the necessary details which have not been explicitly reported before. This model is applied to the investigation of rippling fringes which have been experimentally observed on a superlattice, and it is found that the rippling fringes are not related to the superlattice itself. A superlattice with abnormal topmost layers interaction is simulated, and the result affirms the validity of the moiré rotation pattern assumption. The "odd-even" transition along the atomic rows of a superlattice is simulated, and the simulation result shows that when there is more than one rotated layer at the top, the "odd-even" transition will not be manifest. ©2005 The Japan Society of Applied Physics.

Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices

The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 1100℃. Titanium starts reacting from 750℃ onwards for 100 milliseconds reaction times whereas tantalum starts reacting only above 900℃ for such short reaction times. RBS results confirm that silicon is the major diffusing species and there is no evidence for the formation of ternary silicides. Reactions have also been explored on millisecond time scales by non-isothermal heating.

Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells

This paper reports on an extensive analysis of the electroluminescence characteristics of InGaN-based LEDs with color-coded structure, i.e., with a triple quantum well structure in which each quantum well has a different indium content. The analysis is based on combined electroluminescence measurements and two-dimensional simulations, carried out at different current and temperature levels. Results indicate that (i) the efficiency of each of the quantum wells strongly depends on device operating conditions (current and temperature); (ii) at low current and temperature levels, only the quantum well closer to the p-side has a significant emission; (iii) emission from the other quantum wells is favored at high current levels. The role of carrier injection, hole mobility, carrier density and non-radiative recombination in determining the relative intensity of the quantum wells is discussed in the text. © 2013 The Japan Society of Applied Physics.