High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N/Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. (c) 2007 American Institute of Physics.

Using internal fibre geometry to improve the performance of pin-loaded holes in composite materials

The anisotropic nature of fibre reinforced composites leads to large stress concentrations around pin-loaded holes through standard weave cloths. Proper understanding of how this anisotropic nature affects the load distribution around holes can be utilised to reduce these con-centrations if sufficient thought is given to the internal fibre geometry near to the hole. Such local reinforcements need not be highly complex and can be readily produced without excessive effort, producing significant improvements in performance. © 1996 Kluwer Academic Publishers.