Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

An analytical study of the low frequency structural responses of a submerged hull

This paper studies the low frequency vibrational behaviour of a submerged hull. The submerged hull is modelled as a finite fluid-loaded cylindrical shell closed at each end by circular plates. The external pressure acting on the hull due to the fluid loading is analytically calculated using an infinite model. Three excitation cases of the hull are considered. In the first model, an axial point force is applied at the centre of one end plate, giving rise to an axisymmetric case in which only the zeroth circumferential shell modes are excited. In the second model, an axial point force is applied at the edge of the end plate. In the third model, a radial point force is applied also at the edge of the end plate. In the second and third load cases, all cylindrical shell circumferential modes are excited. The effects of fluid loading and different excitation locations are studied. A more complex hull model including stiffeners and bulkheads is then examined. A smeared approach is used to analytically model the ring stiffeners. All load cases are again considered and the effects of the various influencing factors on the low frequency responses are described.

Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications. © 2013 IEEE.