Scalar dissipation rate transport in the corrugated flamelets and thin reaction zones regime for turbulent premixed flames

The characteristics of the scalar dissipation rate transport in the corrugated flamelets and the thin reaction zones regimes are studied based on two three-dimensional Direct Numerical Simulation (DNS) databases for freely propagating statistically planar turbulent premixed flames. The turbulent flame parameters are so chosen that the database which represents the corrugated flamelets regime has a global Damköhler number Da>1 whereas the database representing the thin reaction zones regime has Da <1. It is demonstrated that the terms originating from the correlation between fluctuating velocity and scalar gradient T1 shows strong Da dependence. The terms originating from dilatation T2, the scalar inner product of gradients of velocity and scalar fields T3 and the correlation between reaction rate and scalar gradients T4 and the dissipation term D2 remain important for both the flames. However, T3 dissipates scalar dissipation rate in the Da > 1 flame while it produces scalar dissipation rate in the Da < 1 flame. This difference is because of the change in the alignment between scalar and velocity gradients

Channel selective tunnelling through a nanographene assembly.

We report selective tunnelling through a nanographene intermolecular tunnel junction achieved via scanning tunnelling microscope tip functionalization with hexa-peri-hexabenzocoronene (HBC) molecules. This leads to an offset in the alignment between the energy levels of the tip and the molecular assembly, resulting in the imaging of a variety of distinct charge density patterns in the HBC assembly, not attainable using a bare metallic tip. Different tunnelling channels can be selected by the application of an electric field in the tunnelling junction, which changes the condition of the HBC on the tip. Density functional theory-based calculations relate the imaged HBC patterns to the calculated molecular orbitals at certain energy levels. These patterns bear a close resemblance to the π-orbital states of the HBC molecule calculated at the relevant energy levels, mainly below the Fermi energy of HBC. This correlation demonstrates the ability of an HBC functionalized tip as regards accessing an energy range that is restricted to the usual operating bias range around the Fermi energy with a normal metallic tip at room temperature. Apart from relating to molecular orbitals, some patterns could also be described in association with the Clar aromatic sextet formula. Our observations may help pave the way towards the possibility of controlling charge transport between organic interfaces.

Spatial emission control of vertical cavity surface emitting lasers to provide bandwidth gain in multimode fibre links using a simple alignment technique

Etched VCSEL sources are reported which avoid bandwidth collapse in multimode fibre using a simple coupling technique to control the launch. These devices have allowed better than over-filled launch bandwidth for alignment tolerances of ±7 microns.

Local synthesis and alignment of zinc oxide nanowires in aqueous solution using microheaters

A bottom-up technique for synthesizing transversely suspended zinc oxide nanowires (ZnO NWs) under a zinc nitrate (Zn(NO 3) 2· 6H 2O) and hexamethylenetetramine (HMTA, (CH 2) 6·N 4) solution within a microfabricated device is reported in this paper. The device consists of a microheater which is used to initially create an oxidized ZnO seed layer. ZnO NWs are then locally synthesized by the microheater and electrodes embedded within the devices are used to drive electric field directed horizontal alignment of the nanowires within the device. The entire process is carried out at low temperature. This approach has the potential to considerably simplify the fabrication and assembly of ZnO nanowires on CMOS compatible substrates, allowing for the chemical synthesis to be carried out under near-ambient conditions by locally defining the conditions for nanowire growth on a silicon reactor chip. © 2012 IEEE.