35 resultados para HYSTERESIS


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The authors report an intriguing resistivity versus magnetic field dependence in polycrystalline composite samples containing a magnetoresistive manganite (ferromagnetic/conducting La0.7 Ca0.3 Mn O3) and a magnetic manganese oxide (ferrimagnetic/insulating Mn3 O4). At 10 K, when the magnetic field is scanned from positive to negative values, the resistance peak occurs at positive magnetic field, instead of zero or negative field as usually observed in polycrystalline manganite samples. The position of the resistance peak agrees well with the cancellation of the internal magnetic field, suggesting that the demagnetization effects are responsible for this behavior. © 2007 American Institute of Physics.

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A 1/20-scale, low speed model rig representing the fan and nacelle of a high bypass ratio jet engine has been tested under crosswind conditions. The flow conditions under which the intake flow separates and reattaches have been found to exhibit considerable hysteresis. This phenomenon has been examined by a careful test procedure in which the crosswind angle has been slowly increased and then decreased. Measurements of the hysteresis associated with separation and reattachment are presented for independent variations in stream-tube contraction ratio, ground clearance, fan operating point and Reynolds number. The results reveal that particular care must be taken to allow for any hysteresis when testing intakes under crosswind conditions. They also indicate that separation hysteresis is particularly sensitive to fan operating point and the position of the ground plane. These findings suggest that it is important for high Reynolds number intake tests and calculations to include a ground plane and a model of the downstream turbomachinery. © 2002 by the author(s).

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The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

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Results are given for bistable effects in closely coupled twin stripe lasers. These devices use controlled adjustment of asymmetric transverse optical gain to obtain bistability. Various bistable effects have been observed. Initially the authors reported a large light/current hysteresis loop obtained as the drive current to the laser was raised and lowered. Information concerning the bistable mechanisms was then obtained by applying small current pulses into each stripe. It was thus found that bistability was involved with the switching from one stable laser waveguiding mechanism to another. More recently the experimental measurement system has been much improved. Through the use of computer control of motorised micromovements and computer controlled data management, time resolved near and far field, and charge carrier concentration distribution measurements have been more accurately carried out. The paper will outline briefly this system, and report on how it has helped to reveal new mechanisms of bistability in twin stripe lasers.

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We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

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Using a magneto-optical (MO) technique, magnetic field distributions have been measured in a melt-textured YBa 2Cu 3O 7-x bulk superconductor, joined to form an artificial grain boundary (GB), in an external magnetic field perpendicular to the sample surface. The magnetic field at a weak section of the GB shows different values between the field increasing up to 150mT and decreasing down to 0T after zero-field-cooling. Namely, the magnetic field in increasing field is higher than that in decreasing field, even in the same external field. This result supports a model in which such differences in magnetic field at the weak-link GB give rise to the hysteresis behavior in the field dependence of transport critical current density in polycrystalline samples. The field distributions across a well-joined region of the GB behave similarly to the adjoining bulk material and this result indicates the possibility of creating useful artifacts provided that the strongly coupled sections can be reproduced on a larger scale.

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Numerical techniques for non-equilibrium condensing flows are presented. Conservation equations for homogeneous gas-liquid two-phase compressible flows are solved by using a finite volume method based on an approximate Riemann solver. The phase change consists of the homogeneous nucleation and growth of existing droplets. Nucleation is computed with the classical Volmer-Frenkel model, corrected for the influence of the droplet temperature being higher than the steam temperature due to latent heat release. For droplet growth, two types of heat transfer model between droplets and the surrounding steam are used: a free molecular flow model and a semi-empirical two-layer model which is deemed to be valid over a wide range of Knudsen number. The computed pressure distribution and Sauter mean droplet diameters in a convergent-divergent (Laval) nozzle are compared with experimental data. Both droplet growth models capture qualitatively the pressure increases due to sudden heat release by the non-equilibrium condensation. However the agreement between computed and experimental pressure distributions is better for the two-layer model. The droplet diameter calculated by this model also agrees well with the experimental value, whereas that predicted by the free molecular model is too small. Condensing flows in a steam turbine cascade are calculated at different Mach numbers and inlet superheat conditions and are compared with experiments. Static pressure traverses downstream from the blade and pressure distributions on the blade surface agree well with experimental results in all cases. Once again, droplet diameters computed with the two-layer model give best agreement with the experiments. Droplet sizes are found to vary across the blade pitch due to the significant variation in expansion rate. Flow patterns including oblique shock waves and condensation-induced pressure increases are also presented and are similar to those shown in the experimental Schlieren photographs. Finally, calculations are presented for periodically unsteady condensing flows in a low expansion rate, convergent-divergent (Laval) nozzle. Depending on the inlet stagnation subcooling, two types of self-excited oscillations appear: a symmetric mode at lower inlet subcooling and an asymmetric mode at higher subcooling. Plots of oscillation frequency versus inlet sub-cooling exhibit a hysteresis loop, in accord with observations made by other researchers for moist air flow. Copyright © 2006 by ASME.