Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

Understanding function and function-to-form evolution

This is a report on a workshop held at Cambridge University Engineering Design Centre, 17-10 June 1992. This workshop was held to discuss the issue of 'function' and 'function-to-form' evolution in mechanical design. The authors organised this workshop as they felt that their understanding of these topics was incomplete and that discussions between researchers might help to clarify some key issues.

The topic chosen for the workshop proved to be a stimulating one. The term 'function' is part of a designer's daily vocabulary, however there is poor agreement about its definition. In order to develop computer systems to support product evolution, a precise definition is required. Further the value of 'function' and 'function-to-form' evolution as a good choice of workshop topic is evident from the lack of firm conclusions that resulted from the sessions. This lack of consensus made for lively discussion and left participants questioning many of their preconceived ideas.

Attendance at the workshop was by invitation only. A list of the participants (not all those invited could attend due to time and financial constraints) is given in Appendix 1.