A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Investigation of damping effects on statistical energy analysis of coupled structures

The effects of damping on energy sharing in coupled systems are investigated. The approach taken is to compute the forced response patterns of various idealised systems, and from these to calculate the parameters of Statistical Energy Analysis model for the systems using the matrix inversion approach [1]. It is shown that when SEA models are fitted by this procedure, the values of the coupling loss factors are significantly dependent on damping except when it is sufficiently high. For very lightly damped coupled systems, varying the damping causes the values of the coupling loss factor to vary in direct proportion to the internal loss factor. In the limit of zero damping, the coupling loss factors tend to zero. This is a view which contrasts strongly with 'classical' SEA, in which coupling loss factors are determined by the nature of the coupling between subsystems, independent of subsystem damping. One implication of the strong damping dependency is that equipartition of modal energy under low damping does not in general occur. This is contrary to the classical SEA prediction that equipartition of modal energy always occurs if the damping can be reduced to a sufficiently small value. It is demonstrated that the use of this classical assumption can lead to gross overestimates of subsystem energy ratios, especially in multi-subsystem structures. © 1996 Academic Press Limited.