Transparent electrode with a nanostructured coating.

Using single-walled nanotubes as an example, we fabricated transparent conductive coatings and demonstrated a new technique of centrifuge coating as a potential low-waste, solution-based batch process for the fabrication of nanostructured coatings. A theoretical model is developed to account for the sheet resistance exhibited by layered random-network coatings such as nanofilaments and graphene. The model equation is analytical and compact, and allows the correlation of very different scaling regimes reported in the literature to the underlying coating microstructure. Finally, we also show a refined experimental setup to systematically measure the curvature-dependent sheet resistance.

Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts

We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting. © 2005 American Institute of Physics.