Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE.

Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE.

First demonstration on the non-transparency of FWM and its application of 40 Gbit/s all-optical CSRZ-to-RZ format conversion

We report first experimental demonstration on the non-transparent characteristic of FWM using NRZ-DPSK, RZ-DPSK, CSRZ-DPSK, and CSRZ signals. One potential non-transparency application of 40Gbit/s CSRZ-to-RZ format conversion is experimentally demonstrated. © 2008 IEEE.

In vivo regulation of the Vi antigen in Salmonella and induction of immune responses with an in vivo-inducible promoter.

Salmonella enterica serovar Typhi, the agent of typhoid fever in humans, expresses the surface Vi polysaccharide antigen that contributes to virulence. However, Vi expression can also be detrimental to some key steps of S. Typhi infectivity, for example, invasion, and Vi is the target of protective immune responses. We used a strain of S. Typhimurium carrying the whole Salmonella pathogenicity island 7 (SPI-7) to monitor in vivo Vi expression within phagocytic cells of mice at different times after systemic infection. We also tested whether it is possible to modulate Vi expression via the use of in vivo-inducible promoters and whether this would trigger anti-Vi antibodies through the use of Vi-expressing live bacteria. Our results show that Vi expression in the liver and spleen is downregulated with the progression of infection and that the Vi-negative population of bacteria becomes prevalent by day 4 postinfection. Furthermore, we showed that replacing the natural tviA promoter with the promoter of the SPI-2 gene ssaG resulted in sustained Vi expression in the tissues. Intravenous or oral infection of mice with a strain of S. Typhimurium expressing Vi under the control of the ssaG promoter triggered detectable levels of all IgG subclasses specific for Vi. Our work highlights that Vi is downregulated in vivo and provides proof of principle that it is possible to generate a live attenuated vaccine that induces Vi-specific antibodies after single oral administration.

Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

The development of the Nanolith parallel electron-beam writing head was discussed. The fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in the lithographic system were described. The microcathode exhibited a peak current of 10.5 μA at 48 V when operated with a duty cycle of 0.5 percent.

Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition

Plasma enhanced chemical vapour deposition (PECVD) is a controlled technique for the production of vertically aligned multiwall carbon nanotubes for field emission applications. In this paper, we investigate the electrical properties of individual carbon nanotubes which is important for designing field emission devices. PECVD nanotubes exhibit a room temperature resistance of 1-10 kΩ/μm length (resistivity 10-6 to 10-5 Ω m) and have a maximum current carrying capability of 0.2-2 mA (current density 107-108 A/cm2). The field emission characteristics show that the field enhancement of the structures is strongly related to the geometry (height/radius) of the structures and maximum emission currents of ∼ 10 μA were obtained. The failure of nanotubes under field emission is also discussed. © 2002 Elsevier Science B.V. All rights reserved.

Self-aligned, gated arrays of individual nanotube and nanowire emitters

We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, and emitter. The nanotube-based gated nanocathode array has a low turn-on voltage of 25 V and a peak current of 5 μA at 46 V, with a gate current of 10 nA (i.e., 99% transparency). These low operating voltage cathodes are potentially useful as electron sources for field emission displays or miniaturizing electron-based instrumentation.