Redundancy quantification in the safety assessment of existing concrete beam-and-slab bridges

In current practice the strength evaluation of a bridge system is typically based on firstly using elastic analysis to determine the distribution of load effects in the elements and then checking the ultimate section capacity of those elements. Ductility of the components in most bridge structures permits local yield and subsequent redistribution of the applied loads from the most heavily loaded elements. As a result a bridge can continue to carry additional loading even after one member has yielded, which has conventionally been adopted as the "failure criterion" in bridge strength evaluation. This means that a bridge with inherent redundancy has additional reserves of strength such that the failure of one element does not result in the failure of the complete system. For these bridges warning signs will show up and measures can be undertaken before the ultimate collapse is happening. This paper proposes a rational methodology for calculating the ultimate system strength and including in bridge evaluation the warning level due to redundancy. © 2004 Taylor & Francis Group, London.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N/Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. (c) 2007 American Institute of Physics.