Hardfacing using supersonic laser depostion of stellite-6

The capability of manufacturing coatings is of central importance in engineering design. Many components require nowadays the application of additional layers, to enhance mechanical properties and protect against hostile environments. Supersonic Laser Deposition (SLD) is a novel coating method, based upon Cold Spray (CS) principles. In this technique the deposition velocities can be significantly lower than those required for effective bonding in CS applications. The addition of laser heat energy permits a change in the thermodynamic experience of impacting particles, thereby offering a greater opportunity for metallurgical bonding at lower velocities compared to the CS process technology. The work reported in this paper demonstrates the ability of the SLD process to deliver hard facing materials to engineering surfaces. Stellite-6 has been deposited on low carbon steel tubes over a range of process parameters, determining the appropriate target power and traverse speeds for coating deposition. Coating properties and parameters were examined to determine the main properties, micro-structure and processing cost. Their morphology was studied through optical microscopy, SEM and X-Ray Diffraction. The results have shown that SLD is capable of depositing Stellite-6, with enhanced properties compared to laser clad counterparts.

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.

Free-Space Interconnect for Optical Switch and Analogue Neural Network

In this paper, the architecture of a vector-matrix multiplier (MVM) is simulated. The optical design can be made compact by the use of GRIN lenses for the optical fan-in. The intended application area was in storage area networks (SANs) but the concept can be applied to a neural network. © 2011 Allerton Press, Inc.