Caratterizzazione delle Prestazioni di Protezione al Fuoco di Vernici Intumescenti

Le pitture intumescenti sono utilizzate come protettivi passivi antincendio nel settore delle costruzioni. In particolare sono utilizzate per aumentare la resistenza al fuoco di elementi in acciaio. Le proprietà termiche di questi rivestimenti sono spesso sconosciute o difficili da stimare per via del fatto che variano notevolmente durante il processo di espansione che subisce l’intumescente quando esposto al calore di un incendio. Per questa ragione la validazione della resistenza al fuoco di un rivestimento presente in commercio si basa su metodi costosi economicamente e come tempi di esecuzione nel quale ciascuna trave e colonna rivestita di protettivo deve essere testata una alla volta attraverso il test di resistenza al fuoco della curva cellulosica. In questo lavoro di tesi adottando invece un approccio basato sulla modellazione termica del rivestimento intumescente si ottiene un aiuto nella semplificazione della procedura di test ed un supporto nella progettazione della resistenza al fuoco delle strutture. Il tratto di unione nei vari passaggi della presente tesi è stata la metodologia di stima del comportamento termico sconosciuto, tale metodologia di stima è la “Inverse Parameter Estimation”. Nella prima fase vi è stata la caratterizzazione chimico fisica della vernice per mezzo di differenti apparecchiature come la DSC, la TGA e l’FT-IR che ci hanno permesso di ottenere la composizione qualitativa e le temperature a cui avvengono i principali processi chimici e fisici che subisce la pittura come anche le entalpie legate a questi eventi. Nella seconda fase si è proceduto alla caratterizzazione termica delle pitture al fine di ottenerne il valore di conduttività termica equivalente. A tale scopo si sono prima utilizzate le temperature dell’acciaio di prove termiche alla fornace con riscaldamento secondo lo standard ISO-834 e successivamente per meglio definire le condizioni al contorno si è presa come fonte di calore un cono calorimetrico in cui la misura della temperatura avveniva direttamente nello spessore del’intumescente. I valori di conduttività ottenuti sono risultati congruenti con la letteratura scientifica e hanno mostrato la dipendenza della stessa dalla temperatura, mentre si è mostrata poco variante rispetto allo spessore di vernice deposto ed alla geometria di campione utilizzato.

Photoconductivity and Electro-Optical Properties of Wide Band Gap Metal Oxides

The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap materials, aiming at fabricating new optoelectronic devices such as solar-blind UV photodetectors, high power electronics, and gas sensors. Photocurrent spectroscopy and DC photocurrent time evolution were used to investigate the performance of prototypes under different atmospheres, temperatures and excitation wavelengths (or dark conditions). Cathodoluminescence, absorption spectroscopy, XRD and SEM were used to assess structural, morphologic, electrical and optical properties of materials. This thesis is divided into two main sections, each describing the work done on a different metal-oxide semiconductor. 1) MOVPE-grown Ga2O3 thin films for UV solar-blind photodetectors and high power devices The semiconducting oxides, among them Ga2O3, have been employed for several decades as transparent conducting oxide (TCO) electrodes for fabrication of solar cells, displays, electronic, and opto-electronic devices. The interest was mainly confined to such applications, as these materials tend to grow intrinsically n-type, and attempts to get an effective p-type doping has consistently failed. The key requirements of TCO electrodes are indeed high electrical conductivity and good transparency, while crystallographic perfection is a minor issue. Furthermore, for a long period no high-quality substrates and epi-layers were available, which in turn impeded the development of a truly full-oxide electronics. Recently, Ga2O3 has attracted renewed interest, as large single crystals and high-quality homo- and hetero-epitaxial layers became available, which paved the way to novel application areas. Our research group spent the last two years in developing a low temperature (500-700°C) MOVPE growth procedure to obtain thin films of Ga2O3 on different substrates (Dept. of Physics and IMEM-CNR at UNIPR). We obtained a significant result growing on oriented sapphire epitaxial films of high crystalline, undoped, pure phase -Ga2O3 (hexagonal). The crystallographic properties of this phase were investigated by XRD, in order to clarify the lattice parameters of the hexagonal cell. First design and development of solar blind UV photodetectors based on -phase was carried out and the optoelectronic performance is evaluated by means of photocurrent spectroscopy. The UV-response is adequately fast and reliable to render this unusual phase a subject of great interest for future applications. The availability of a hexagonal phase of Ga2O3 stable up to 700°C, belonging to the same space group of gallium nitride, with high crystallinity and tunable electrical properties, is intriguing in view of the development of nitride-based devices, by taking advantage of the more favorable symmetry and epitaxial relationships with respect to the monoclinic β-phase. In addition, annealing at temperatures higher than 700°C demonstrate that the hexagonal phase converts totally in the monoclinic one. 2) ZnO nano-tetrapods: charge transport mechanisms and time-response in optoelectronic devices and sensors Size and morphology of ZnO at the nanometer scale play a key role in tailoring its physical and chemical properties. Thanks to the possibility of growing zinc oxide in a variety of different nanostructures, there is a great variety of applications, among which gas sensors, light emitting diodes, transparent conducting oxides, solar cells. Even if the operation of ZnO nanostructure-based devices has been recently demonstrated, the mechanisms of charge transport in these assembly is still under debate. The candidate performed an accurate investigation by photocurrent spectroscopy and DC-photocurrent time evolution of electrical response of both single-tetrapod and tetrapod-assembly devices. During the research done for this thesis, a thermal activation energy enables the performance of samples at high temperatures (above about 300°C). The energy barrier is related to the leg-to-leg interconnection in the assembly of nanotetrapods. Percolation mechanisms are responsible for both the very slow photo-response (minutes to hours or days) and the significant persistent photocurrent. Below the bandgap energy, electronic states were investigated but their contribution to the photocurrent are two-three order of magnitude lower than the band edge. Such devices are suitable for employ in photodetectors as well as in gas sensors, provided that the mechanism by which the photo-current is generated and gas adsorption on the surface modify the conductivity of the material are known.