Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Photoproduction of charged pion pairs from hydrogen at energies up to 1500 MeV

Charged pion pair photoproduction has been investigated up to a gamma energy of 1500 MeV, using the Caltech 12-inch heavy liquid bubble chamber with a small diameter, high intensity photon beam passing through a central beam tube gaseous hydrogen target surrounded by the sensitive Freon. Scanning, analysis, and data reduction techniques have been developed to deal with the problems of two-vie stereo, hidden event origins, absence of magnetic field, and the range-energy and multiple scattering relationships that occur in the heavy materials. Roughly 5700 pictures have been scanned and analyzed, yielding 754 acceptable events. Cross section and parameter distributions are generally consistent with the results of previous experiments. A statistically insignificant “bump” was observed in the dipion mass spectrum in the region of 500 MeV, the disputed σ meson mass. This region was investigated as carefully as the limited statistics would allow; dipion angular distributions are consistent with isotropy, and there is indication that some of the events in this region might come from decay of an intermediate N*₁₁ (1425) into a proton and dipion.

Photographic materials on pp. 18, 20, 22, and 24 are essential and will not reproduce clearly on Xerox copies. Photographic copies should be ordered.

Determination of electronic energy levels of molecules by 90° low energy electron scattering

A review of the theory of electron scattering indicates that low incident beam energies and large scattering angles are the favorable conditions for the observation of optically forbidden transitions in atoms and molecules.

An apparatus capable of yielding electron impact spectra at 90° with incident electron beam energies between 30 and 50 electron volts is described. The resolution of the instrument is about 1 electron volt.

Impact spectra of thirteen molecules have been obtained. Known forbidden transitions to the helium 2³S, the hydrogen b³Ʃ⁺_u, the nitrogen A³Ʃ⁺_u, B³π_g, a’π_g, and C³π_u, the carbon monoxide a³π, the ethylene ᾶ³B_1u, and the benzene ᾶ³B_1u states from the corresponding ground states have been observed.

In addition, singlet-triplet vertical transitions in acetylene, propyne, propadiene, norbornadiene and quadricyclene, peaking at 5.9, 5.9, 4.5, 3.8, and 4.0 ev (±0.2 ev), respectively, have been observed and assigned for the first time.

Photoproduction of charged pion pairs from hydrogen at photon energies between 800 and 1500 MeV

The reaction γ + p p + π⁺ + π^- has been studied for photon energies between 800 and 1500 MeV and for dipion masses between 510 and 900 MeV. The bremsstrahlung beam from the Caltech synchrotron was passed through a liquid hydrogen target and spark chambers were used to detect the three final particles. In addition, the proton energy was determined by a range measurement. Approximately 40,000 photographs were taken, yielding 3018 acceptable events. The results were fit to an incoherent combination of the N*(1238) resonance, the p^o (750) resonance, and three-body phase space, with various models being tried for p^o production. The total cross section for p^o production is consistent with previous experiments. However, the angular dependence of the cross section is slightly more peaked in the forward direction, and the ratio of p^o production to phase space production is larger than previously observed.

However, since this experiment was only sensitive to the production angles cos θ cm ≥ .75, statistical fluctuations and/or an anisotropic distribution of background production have a severe influence on the p^o to background ratio. Of the p^o models tested, the results prefer p^o production by the one pion exchange mechanism with a very steep form factor dependence. The values of the mass and width of the p^o found here are consistent with previous experiments.