An investigation of detached shock waves

This investigation demonstrates an application of a flexible wall nozzle for testing in a supersonic wind tunnel. It is conservative to say that the versatility of this nozzle is such that it warrants the expenditure of time to carefully engineer a nozzle and incorporate it in the wind tunnel as a permanent part of the system. The gradients in the test section were kept within one percent of the calibrated Mach number, however, the gradients occurring over the bodies tested were only ± 0.2 percent in Mach number.

The conditions existing on a finite cone with a vertex angle of 75° were investigated by considering the pressure distribution on the cone and the shape of the shock wave. The pressure distribution on the surface of the 75° cone when based on upstream conditions does not show any discontinuities at the theoretical attachment Mach number.

Both the angle of the shock wave and the pressure distribution of the 75° cone are in very close agreement with the theoretical values given in the Kopal report, (Ref. 3).

The location of the intersection of the sonic line with the surface of the cone and with the shock wave are given for the cone. The blocking characteristics of the GALCIT supersonic wind tunnel were investigated with a series of 60° cones.

Complexity of rupture propagation in large earthquakes in relation to tectonic environment

Complexity in the earthquake rupture process can result from many factors. This study investigates the origin of such complexity by examining several recent, large earthquakes in detail. In each case the local tectonic environment plays an important role in understanding the source of the complexity.

Several large shallow earthquakes (M_s > 7.0) along the Middle American Trench have similarities and differences between them that may lead to a better understanding of fracture and subduction processes. They are predominantly thrust events consistent with the known subduction of the Cocos plate beneath N. America. Two events occurring along this subduction zone close to triple junctions show considerable complexity. This may be attributable to a more heterogeneous stress environment in these regions and as such has implications for other subduction zone boundaries.

An event which looks complex but is actually rather simple is the 1978 Bermuda earthquake (M_s ~ 6). It is located predominantly in the mantle. Its mechanism is one of pure thrust faulting with a strike N 20°W and dip 42°NE. Its apparent complexity is caused by local crustal structure. This is an important event in terms of understanding and estimating seismic hazard on the eastern seaboard of N. America.

A study of several large strike-slip continental earthquakes identifies characteristics which are common to them and may be useful in determining what to expect from the next great earthquake on the San Andreas fault. The events are the 1976 Guatemala earthquake on the Motagua fault and two events on the Anatolian fault in Turkey (the 1967, Mudurnu Valley and 1976, E. Turkey events). An attempt to model the complex P-waveforms of these events results in good synthetic fits for the Guatemala and Mudurnu Valley events. However, the E. Turkey event proves to be too complex as it may have associated thrust or normal faulting. Several individual sources occurring at intervals of between 5 and 20 seconds characterize the Guatemala and Mudurnu Valley events. The maximum size of an individual source appears to be bounded at about 5 x 10²⁶ dyne-cm. A detailed source study including directivity is performed on the Guatemala event. The source time history of the Mudurnu Valley event illustrates its significance in modeling strong ground motion in the near field. The complex source time series of the 1967 event produces amplitudes greater by a factor of 2.5 than a uniform model scaled to the same size for a station 20 km from the fault.

Three large and important earthquakes demonstrate an important type of complexity --- multiple-fault complexity. The first, the 1976 Philippine earthquake, an oblique thrust event, represents the first seismological evidence for a northeast dipping subduction zone beneath the island of Mindanao. A large event, following the mainshock by 12 hours, occurred outside the aftershock area and apparently resulted from motion on a subsidiary fault since the event had a strike-slip mechanism.

An aftershock of the great 1960 Chilean earthquake on June 6, 1960, proved to be an interesting discovery. It appears to be a large strike-slip event at the main rupture's southern boundary. It most likely occurred on the landward extension of the Chile Rise transform fault, in the subducting plate. The results for this event suggest that a small event triggered a series of slow events; the duration of the whole sequence being longer than 1 hour. This is indeed a "slow earthquake".

Perhaps one of the most complex of events is the recent Tangshan, China event. It began as a large strike-slip event. Within several seconds of the mainshock it may have triggered thrust faulting to the south of the epicenter. There is no doubt, however, that it triggered a large oblique normal event to the northeast, 15 hours after the mainshock. This event certainly contributed to the great loss of life-sustained as a result of the Tangshan earthquake sequence.

What has been learned from these studies has been applied to predict what one might expect from the next great earthquake on the San Andreas. The expectation from this study is that such an event would be a large complex event, not unlike, but perhaps larger than, the Guatemala or Mudurnu Valley events. That is to say, it will most likely consist of a series of individual events in sequence. It is also quite possible that the event could trigger associated faulting on neighboring fault systems such as those occurring in the Transverse Ranges. This has important bearing on the earthquake hazard estimation for the region.

Signatures of Topological Superconductors

Topological superconductors are particularly interesting in light of the active ongoing experimental efforts for realizing exotic physics such as Majorana zero modes. These systems have excitations with non-Abelian exchange statistics, which provides a path towards topological quantum information processing. Intrinsic topological superconductors are quite rare in nature. However, one can engineer topological superconductivity by inducing effective p-wave pairing in materials which can be grown in the laboratory. One possibility is to induce the proximity effect in topological insulators; another is to use hybrid structures of superconductors and semiconductors.

The proposal of interfacing s-wave superconductors with quantum spin Hall systems provides a promising route to engineered topological superconductivity. Given the exciting recent progress on the fabrication side, identifying experiments that definitively expose the topological superconducting phase (and clearly distinguish it from a trivial state) raises an increasingly important problem. With this goal in mind, we proposed a detection scheme to get an unambiguous signature of topological superconductivity, even in the presence of ordinarily detrimental effects such as thermal fluctuations and quasiparticle poisoning. We considered a Josephson junction built on top of a quantum spin Hall material. This system allows the proximity effect to turn edge states in effective topological superconductors. Such a setup is promising because experimentalists have demonstrated that supercurrents indeed flow through quantum spin Hall edges. To demonstrate the topological nature of the superconducting quantum spin Hall edges, theorists have proposed examining the periodicity of Josephson currents respect to the phase across a Josephson junction. The periodicity of tunneling currents of ground states in a topological superconductor Josephson junction is double that of a conventional Josephson junction. In practice, this modification of periodicity is extremely difficult to observe because noise sources, such as quasiparticle poisoning, wash out the signature of topological superconductors. For this reason, We propose a new, relatively simple DC measurement that can compellingly reveal topological superconductivity in such quantum spin Hall/superconductor heterostructures. More specifically, We develop a general framework for capturing the junction's current-voltage characteristics as a function of applied magnetic flux. Our analysis reveals sharp signatures of topological superconductivity in the field-dependent critical current. These signatures include the presence of multiple critical currents and a non-vanishing critical current for all magnetic field strengths as a reliable identification scheme for topological superconductivity.

This system becomes more interesting as interactions between electrons are involved. By modeling edge states as a Luttinger liquid, we find conductance provides universal signatures to distinguish between normal and topological superconductors. More specifically, we use renormalization group methods to extract universal transport characteristics of superconductor/quantum spin Hall heterostructures where the native edge states serve as a lead. Interestingly, arbitrarily weak interactions induce qualitative changes in the behavior relative to the free-fermion limit, leading to a sharp dichotomy in conductance for the trivial (narrow superconductor) and topological (wide superconductor) cases. Furthermore, we find that strong interactions can in principle induce parafermion excitations at a superconductor/quantum spin Hall junction.

As we identify the existence of topological superconductor, we can take a step further. One can use topological superconductor for realizing Majorana modes by breaking time reversal symmetry. An advantage of 2D topological insulator is that networks required for braiding Majoranas along the edge channels can be obtained by adjoining 2D topological insulator to form corner junctions. Physically cutting quantum wells for this purpose, however, presents technical challenges. For this reason, I propose a more accessible means of forming networks that rely on dynamically manipulating the location of edge states inside of a single 2D topological insulator sheet. In particular, I show that edge states can effectively be dragged into the system's interior by gating a region near the edge into a metallic regime and then removing the resulting gapless carriers via proximity-induced superconductivity. This method allows one to construct rather general quasi-1D networks along which Majorana modes can be exchanged by electrostatic means.

Apart from 2D topological insulators, Majorana fermions can also be generated in other more accessible materials such as semiconductors. Following up on a suggestion by experimentalist Charlie Marcus, I proposed a novel geometry to create Majorana fermions by placing a 2D electron gas in proximity to an interdigitated superconductor-ferromagnet structure. This architecture evades several manufacturing challenges by allowing single-side fabrication and widening the class of 2D electron gas that may be used, such as the surface states of bulk semiconductors. Furthermore, it naturally allows one to trap and manipulate Majorana fermions through the application of currents. Thus, this structure may lead to the development of a circuit that enables fully electrical manipulation of topologically-protected quantum memory. To reveal these exotic Majorana zero modes, I also proposed an interference scheme to detect Majorana fermions that is broadly applicable to any 2D topological superconductor platform.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.