Design of an aerial tramway

An Aerial Tramway is a device for transporting material in receptacles over wire ropes supported at various elevations above the ground by means of posts or standards. Wire rope has been known for many centuries, and there is a drawing of a ropeway appearing in a book dated 1411.

Mean-speed measurements in two-dimensional, incompressible, fully-developed turbulent channel flow

Mean velocity profiles were measured in the 5” x 60” wind channel of the turbulence laboratory at the GALCIT, by the use of a hot-wire anemometer. The repeatability of results was established, and the accuracy of the instrumentation estimated. Scatter of experimental results is a little, if any, beyond this limit, although some effects might be expected to arise from variations in atmospheric humidity, no account of this factor having been taken in the present work. Also, slight unsteadiness in flow conditions will be responsible for some scatter.

Irregularities of a hot-wire in close proximity to a solid boundary at low speeds were observed, as have already been found by others.

That Kármán’s logarithmic law holds reasonably well over the main part of a fully developed turbulent flow was checked, the equation u/u_t = 6.0 + 6.25 log₁₀ y^ut/v being obtained, and, as has been previously the case, the experimental points do not quite form one straight line in the region where viscosity effects are small. The values of the constants for this law for the best over-all agreement were determined and compared with those obtained by others.

The range of Reynolds numbers used (based on half-width of channel) was from 20,000 to 60,000.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Photodisintegration of helium-3 at energies between 200 and 600 MEV

We have measured differential cross-sections for the two-body photodisintegration of Helium-3, ɣ + He³ → p + d, between incident photon energies of 200 and 600 MeV, and for center of mass frame angles between 30° and 150°. Both final state particles were detected in arrays of wire spark chambers and scintillation counters; the high momentum particle was analyzed in a magnet spectrometer. The results are interpreted in terms of amplitudes to produce the ∆(1236) resonance in an intermediate state, as well as non-resonant amplitudes. This experiment, together with an (unfinished) experiment on the inverse reaction, p + d → He³ + ɣ, will provide a reciprocity test of time reversal invariance.