Infared observations of H II regions

Spectral data are presented, giving intensities of the Brackett ɤ (B₇) line at six positions in M 42 and of the Brackett ten through fourteen (B₁₀-B₁₄) lines plus the He 4d³D-3p³p⁰ line at three positions in M 42. Observations of the Brackett ɤ line are also given for the planetary nebulae NGC 7027 and IC 418. Brackett gamma is shown to exhibit an anomalous satellite line in NGC 7027. Broadband data are presented, giving intensities at effective wavelengths of 1.25 μ, 1.65 μ, 2.2 μ, 3.5 μ and 4.8 μ for three positions in M 42.

Comparisons with visual and radio data as well as 12 micron and 20 micron data are used to derive reddening, electron temperatures, and electron densities for M 42 and the two planetaries, as well as a helium abundance for M 42. A representative electron temperature of 8400°K ± 1000°K, an electron density of 1.5 ±0.1 x 10³ cm^-3 and a He/H number density ratio of 0.10 +0.10/-0.05 are derived for the central region of M 42. The electron temperature is found to increase slightly with distance from the Trapezium.

M 42 is shown to emit in excess of the predicted recombination radiation throughout the entire infrared spectrum. The variations in the excess with wavelength and with position are analyzed to determine which of several physical processes may be operating. The longer wavelength infrared excess is shown to be dominated by dust emission, while the shorter wavelength infrared excess is caused by dust scattering. The dust is shown to be larger than the average interstellar particle. A new feature of the Orion red star ORS-1 is found in that it appears to have a reflection nebula around it.

Mössbauer effect investigations of the hyperfine interactions and relaxation phenomena in salts of thulium

Two new phenomena have been observed in Mössbauer spectra: a temperature-dependent shift of the center of gravity of the spectrum, and an asymmetric broadening of the spectrum peaks. Both phenomena were observed in thulium salts. In the temperature range 1˚K ≤ T ≤ 5˚K the observed shift has an approximate inverse temperature dependence. We explain this on the basis of a Van Vleck type of interaction between the magnetic moment of two nearly degenerate electronic levels and the magnetic moment of the nucleus. From the size of the shift we are able to deduce an “effective magnetic field” H = (6.0 ± 0.1) x 10⁶ Gauss, which is proportional to ‹r^-3›_M‹G|J|E› where ‹r^-3›_M is an effective magnetic radial integral for the 4f electrons and |G› and |E› are the lowest 4f electronic states in Tm Cl₃·6H₂O. From the temperature dependence of the shift we have derived a preliminary value of 1 cm^-1 for the splitting of these two states. The observed asymmetric line broadening is independent of temperature in the range 1˚K ≤ T ≤ 5˚K, but is dependent on the concentration of thulium ions in the crystal. We explain this broadening on the basis of spin-spin interactions between thulium ions. From size and concentration dependence of the broadening we are able to deduce a spin-spin relaxation time for Tm Cl₃·6H₂O of the order of 10^-11 sec.

A study of the ^9 Be nucleus

The reaction ⁷Li(³He, p)⁹Be has been used to measure excitations and intrinsic widths of levels in ⁹Be below the ⁷Li + d threshold. Previously unreported levels have been found at excitations of (13.78 ± .03) MeV and (16.671 ± .008) MeV with widths of (590 ± 60) keV and (41 ± 4) keV respectively. Two overlapping levels have been found at (11.81 ± .02) MeV and (11.29 ± .03) MeV with widths of (400 ± 30) keV and (620 ± 70) keV respectively. Branching ratios from ⁹Be levels populated in this reaction to the ground and first excited states of ⁸Be have been measured by observing the associated protons in coincidence with the decay neutrons. Branching ratios were found to be:

Excitation in ⁹Be .... Branching Ratio.......... Final Nucleus.........

(MeV) .......................... (percent) .....................................

.. 2.43 ........................... 7.5 ± 1.5 .............. ⁸Be(g.s.)

.. 3.03 ........................... 87 ± 13......................................

.. 4.65 ........................... 13 ± 4.......................................

.. 6.76 .............................. ≤ 2 ......................................

.. 11.29 ...............................≤ 2 ......................................

.. 11.81 ...............................≤ 3 ......................................

.. 6.76 ........................... .41 ≤ B.R. ≤ .69 ....... ⁸Be(2⁺)

.. 11.29 ........................... 14 ± 4 .......................................

.. 11.81 ........................... 12 ± 4 .......................................

Corresponding reduced widths for neutron emission are calculated and a comparison of the results with the expectations of current nuclear models is made. In particular the measured branching ratio to ⁸Be(g.s.) from ⁹Be(2.43 MeV) corresponds to an f-wave reduced with θ²_f = 2.1 x 10^-2, in units of ħ²/mR², with R = 4.35 fm. A comparison of this value with that predicted by a Nilsson model calculation, in which ⁹Be is taken to be a deformed nucleus, is discussed. The measured value for θ²_f is found to be consistent with that expected on the basis of measured E2-transition rates between rotational levels in ⁹Be.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

A generalized Hausdorff dimension for functions and sets

Let E be a compact subset of the n-dimensional unit cube, 1_n, and let C be a collection of convex bodies, all of positive n-dimensional Lebesgue measure, such that C contains bodies with arbitrarily small measure. The dimension of E with respect to the covering class C is defined to be the number

d_C(E) = sup(β:H_{β, C}(E) > 0),

where H_{β, C} is the outer measure

inf(Ʃm(C_i)^β:UC_i Ↄ E, C_i ϵ C) .

Only the one and two-dimensional cases are studied. Moreover, the covering classes considered are those consisting of intervals and rectangles, parallel to the coordinate axes, and those closed under translations. A covering class is identified with a set of points in the left-open portion, 1’_n, of 1_n, whose closure intersects 1_n - 1’_n. For n = 2, the outer measure H_{β, C} is adopted in place of the usual:

Inf(Ʃ(diam. (C_i))^β: UC_i Ↄ E, C_i ϵ C),

for the purpose of studying the influence of the shape of the covering sets on the dimension d_C(E).

If E is a closed set in 1₁, let M(E) be the class of all non-decreasing functions μ(x), supported on E with μ(x) = 0, x ≤ 0 and μ(x) = 1, x ≥ 1. Define for each μ ϵ M(E),

d_C(μ) = lim/c → inf/0 log ∆μ(c)/log c , (c ϵ C)

where ∆μ(c) = v/x (μ(x+c) – μ(x)). It is shown that

d_C(E) = sup (d_C(μ):μ ϵ M(E)).

This notion of dimension is extended to a certain class Ӻ of sub-additive functions, and the problem of studying the behavior of d_C(E) as a function of the covering class C is reduced to the study of d_C(f) where f ϵ Ӻ. Specifically, the set of points in 1₁,

(*) {d_B(F), d_C(f)): f ϵ Ӻ}

is characterized by a comparison of the relative positions of the points of B and C. A region of the form (*) is always closed and doubly-starred with respect to the points (0, 0) and (1, 1). Conversely, given any closed region in 1₂, doubly-starred with respect to (0, 0) and (1, 1), there are covering classes B and C such that (*) is exactly that region. All of the results are shown to apply to the dimension of closed sets E. Similar results can be obtained when a finite number of covering classes are considered.

In two dimensions, the notion of dimension is extended to the class M, of functions f(x, y), non-decreasing in x and y, supported on 1₂ with f(x, y) = 0 for x · y = 0 and f(1, 1) = 1, by the formula

d_C(f) = lim/s · t → inf/0 log ∆f(s, t)/log s · t , (s, t) ϵ C

where

∆f(s, t) = V/x, y (f(x+s, y+t) – f(x+s, y) – f(x, y+t) + f(x, t)).

A characterization of the equivalence d_C1(f) = d_C2(f) for all f ϵ M, is given by comparison of the gaps in the sets of products s · t and quotients s/t, (s, t) ϵ C_i (I = 1, 2).

On the distribution of the signs of the conjugates of the cyclotomic units in the maximal real subfield of the qth cyclotomic field, q A prime

Let F = Ǫ(ζ + ζ ^–1) be the maximal real subfield of the cyclotomic field Ǫ(ζ) where ζ is a primitive qth root of unity and q is an odd rational prime. The numbers u₁=-1, u_k=(ζ^k-ζ^-k)/(ζ-ζ^-1), k=2,…,p, p=(q-1)/2, are units in F and are called the cyclotomic units. In this thesis the sign distribution of the conjugates in F of the cyclotomic units is studied.

Let G(F/Ǫ) denote the Galoi's group of F over Ǫ, and let V denote the units in F. For each σϵ G(F/Ǫ) and μϵV define a mapping sgn_σ: V→GF(2) by sgn_σ(μ) = 1 iff σ(μ) ˂ 0 and sgn_σ(μ) = 0 iff σ(μ) ˃ 0. Let {σ₁, ... , σ_p} be a fixed ordering of G(F/Ǫ). The matrix M_q=(sgn_σj(v_i) ) , i, j = 1, ... , p is called the matrix of cyclotomic signatures. The rank of this matrix determines the sign distribution of the conjugates of the cyclotomic units. The matrix of cyclotomic signatures is associated with an ideal in the ring GF(2) [x] / (x^p+ 1) in such a way that the rank of the matrix equals the GF(2)-dimension of the ideal. It is shown that if p = (q-1)/ 2 is a prime and if 2 is a primitive root mod p, then M_q is non-singular. Also let p be arbitrary, let ℓ be a primitive root mod q and let L = {i | 0 ≤ i ≤ p-1, the least positive residue of defined by ℓⁱ mod q is greater than p}. Let H_q(x) ϵ GF(2)[x] be defined by H_q(x) = g. c. d. ((Σ xⁱ/I ϵ L) (x+1) + 1, x^p + 1). It is shown that the rank of M_q equals the difference p - degree H_q(x).

Further results are obtained by using the reciprocity theorem of class field theory. The reciprocity maps for a certain abelian extension of F and for the infinite primes in F are associated with the signs of conjugates. The product formula for the reciprocity maps is used to associate the signs of conjugates with the reciprocity maps at the primes which lie above (2). The case when (2) is a prime in F is studied in detail. Let T denote the group of totally positive units in F. Let U be the group generated by the cyclotomic units. Assume that (2) is a prime in F and that p is odd. Let F₍₂₎ denote the completion of F at (2) and let V₍₂₎ denote the units in F₍₂₎. The following statements are shown to be equivalent. 1) The matrix of cyclotomic signatures is non-singular. 2) U∩T = U². 3) U∩F²₍₂₎ = U². 4) V₍₂₎/ V₍₂₎² = ˂v₁ V₍₂₎²˃ ʘ…ʘ˂v_p V₍₂₎²˃ ʘ ˂3V₍₂₎²˃.

The rank of M_q was computed for 5≤q≤929 and the results appear in tables. On the basis of these results and additional calculations the following conjecture is made: If q and p = (q -1)/ 2 are both primes, then M_q is non-singular.