18 resultados para Light, Asylums, Madness, Insitutions, Buildings
Resumo:
The (He3, n) reactions on B11, N15, O16, and O18 targets have been studied using a pulsed-beam time-of-flight spectrometer. Special emphasis was placed upon the determination of the excitation energies and properties of states with T = 1 (in Ne18), T = 3/2 (in N13 and F17) and T = 2 (in Ne20). The identification of the T = 3/2 and T = 2 levels is based on the structure of these states as revealed by intensities and shapes of angular distributions. The reactions are interpreted in terms of double stripping theory. Angular distributions have been compared with plane and distorted wave stripping theories. Results for the four reactions are summarized below:
1) O16 (He3, n). The reaction has been studied at incident energies up to 13.5 MeV and two previously unreported levels in Ne18 were observed at Ex = 4.55 ± .015 MeV (Γ = 70 ± 30 keV) and Ex = 5.14 ± .018 MeV (Γ = 100 ± 40 keV).
2) B11 (He3, n). The reaction has been studied at incident energies up to 13.5 MeV. Three T = 3/2 levels in N13 have been identified at Ex = 15.068 ± .008 MeV (Γ ˂ 15 keV), Ex = 18.44 ± .04, and Ex 18.98 ± .02 MeV (Γ = 40 ± 20 keV).
3) N15 (He3, n). The reaction has been studied at incident energies up to 11.88 MeV. T = 3/2 levels in F17 have been identified at Ex = 11.195 ± .007 MeV (Γ ˂ 20 keV), Ex = 12.540 ± .010 MeV (Γ ˂ 25 keV), and Ex = 13.095 ± .009 MeV (Γ ˂ 25 keV).
4) O18 (He3, n). The reaction has been studied at incident energies up to 9.0 MeV. The excitation energy of the lowest T = 2 level in Ne20 has been found to be 16.730 ± .006 MeV (Γ ˂ 20 keV).
Angular distributions of the transitions leading to the above higher isospin states are well described by double stripping theory. Analog correspondences are established by comparing the present results with recent studies (t, p) and (He3, p) reactions on the same targets.
Resumo:
FRAME3D, a program for the nonlinear seismic analysis of steel structures, has previously been used to study the collapse mechanisms of steel buildings up to 20 stories tall. The present thesis is inspired by the need to conduct similar analysis for much taller structures. It improves FRAME3D in two primary ways.
First, FRAME3D is revised to address specific nonlinear situations involving large displacement/rotation increments, the backup-subdivide algorithm, element failure, and extremely narrow joint hysteresis. The revisions result in superior convergence capabilities when modeling earthquake-induced collapse. The material model of a steel fiber is also modified to allow for post-rupture compressive strength.
Second, a parallel FRAME3D (PFRAME3D) is developed. The serial code is optimized and then parallelized. A distributed-memory divide-and-conquer approach is used for both the global direct solver and element-state updates. The result is an implicit finite-element hybrid-parallel program that takes advantage of the narrow-band nature of very tall buildings and uses nearest-neighbor-only communication patterns.
Using three structures of varied sized, PFRAME3D is shown to compute reproducible results that agree with that of the optimized 1-core version (displacement time-history response root-mean-squared errors are ~〖10〗^(-5) m) with much less wall time (e.g., a dynamic time-history collapse simulation of a 60-story building is computed in 5.69 hrs with 128 cores—a speedup of 14.7 vs. the optimized 1-core version). The maximum speedups attained are shown to increase with building height (as the total number of cores used also increases), and the parallel framework can be expected to be suitable for buildings taller than the ones presented here.
PFRAME3D is used to analyze a hypothetical 60-story steel moment-frame tube building (fundamental period of 6.16 sec) designed according to the 1994 Uniform Building Code. Dynamic pushover and time-history analyses are conducted. Multi-story shear-band collapse mechanisms are observed around mid-height of the building. The use of closely-spaced columns and deep beams is found to contribute to the building's “somewhat brittle” behavior (ductility ratio ~2.0). Overall building strength is observed to be sensitive to whether a model is fracture-capable.
Resumo:
Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (Eg = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).
The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.
The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.
Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.
Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’th = (400 ± 80) amp/cm2 for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of ns ≈ 10% for the internal spontaneous quantum efficiency. The above value for ns yields values of tb ≈ τ ≈ 10-9 second and ts ≈ 10-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.
The external quantum efficiency (nd) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is nd ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.