Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Feedback communication using orthogonal signals

This research is concerned with block coding for a feedback communication system in which the forward and feedback channels are independently disturbed by additive white Gaussian noise and average power constrained. Two coding schemes are proposed in which the messages to be coded for transmission over the forward channel are realized as a set of orthogonal waveforms. A finite number of forward and feedback transmissions (iterations) per message is made. Information received over the feedback channel is used to modify the waveform transmitted on successive forward iterations in such a way that the expected value of forward signal energy is zero on all iterations after the first. Similarly, information is sent over the feedback channel in such a way that the expected value of feedback signal energy is also zero on all iterations after the first. These schemes are shown to achieve a lower probability of error than the best one-way coding scheme at all rates up to the forward channel capacity, provided only that the feedback channel capacity be greater than the forward channel capacity. These schemes make more efficient use of the available feedback power than existing feedback coding schemes, and therefore require less feedback power to achieve a given error performance.

Optomechanical Inertial Sensors and Feedback Cooling

The optomechanical interaction is an extremely powerful tool with which to measure mechanical motion. The displacement resolution of chip-scale optomechanical systems has been measured on the order of 1⁄10th of a proton radius. So strong is this optomechanical interaction that it has recently been used to remove almost all thermal noise from a mechanical resonator and observe its quantum ground-state of motion starting from cryogenic temperatures.

In this work, chapter 1 describes the basic physics of the canonical optomechanical system, optical measurement techniques, and how the optomechanical interaction affects the coupled mechanical resonator. In chapter 2, we describe our techniques for realizing this canonical optomechanical system in a chip-scale form factor.

In chapter 3, we describe an experiment where we used radiation pressure feedback to cool a mesoscopic mechanical resonator near its quantum ground-state from room-temperature. We cooled the resonator from a room temperature phonon occupation of <n> = 6.5 million to an occupation of <n> = 66, which means the resonator is in its ground state approximately 2% of the time, while being coupled to a room-temperature thermal environment. At the time of this work, this is the closest a mesoscopic mechanical resonator has been to its ground-state of motion at room temperature, and this work begins to open the door to room-temperature quantum control of mechanical objects.

Chapter 4 begins with the realization that the displacement resolutions achieved by optomechanical systems can surpass those of conventional MEMS sensors by an order of magnitude or more. This provides the motivation to develop and calibrate an optomechanical accelerometer with a resolution of approximately 10 micro-g/rt-Hz over a bandwidth of approximately 30 kHz. In chapter 5, we improve upon the performance and practicality of this sensor by greatly increasing the test mass size, investigating and reducing low-frequency noise, and incorporating more robust optical coupling techniques and capacitive wavelength tuning. Finally, in chapter 6 we present our progress towards developing another optomechanical inertial sensor - a gyroscope.

A mathematical and experimental investigation of microcycle spectral estimates of semiconductor flicker noise

The experimental portion of this thesis tries to estimate the density of the power spectrum of very low frequency semiconductor noise, from 10^-6.3 cps to 1. cps with a greater accuracy than that achieved in previous similar attempts: it is concluded that the spectrum is 1/f^α with α approximately 1.3 over most of the frequency range, but appearing to have a value of about 1 in the lowest decade. The noise sources are, among others, the first stage circuits of a grounded input silicon epitaxial operational amplifier. This thesis also investigates a peculiar form of stationarity which seems to distinguish flicker noise from other semiconductor noise.

In order to decrease by an order of magnitude the pernicious effects of temperature drifts, semiconductor "aging", and possible mechanical failures associated with prolonged periods of data taking, 10 independent noise sources were time-multiplexed and their spectral estimates were subsequently averaged. If the sources have similar spectra, it is demonstrated that this reduces the necessary data-taking time by a factor of 10 for a given accuracy.

In view of the measured high temperature sensitivity of the noise sources, it was necessary to combine the passive attenuation of a special-material container with active control. The noise sources were placed in a copper-epoxy container of high heat capacity and medium heat conductivity, and that container was immersed in a temperature controlled circulating ethylene-glycol bath.

Other spectra of interest, estimated from data taken concurrently with the semiconductor noise data were the spectra of the bath's controlled temperature, the semiconductor surface temperature, and the power supply voltage amplitude fluctuations. A brief description of the equipment constructed to obtain the aforementioned data is included.

The analytical portion of this work is concerned with the following questions: what is the best final spectral density estimate given 10 statistically independent ones of varying quality and magnitude? How can the Blackman and Tukey algorithm which is used for spectral estimation in this work be improved upon? How can non-equidistant sampling reduce data processing cost? Should one try to remove common trands shared by supposedly statistically independent noise sources and, if so, what are the mathematical difficulties involved? What is a physically plausible mathematical model that can account for flicker noise and what are the mathematical implications on its statistical properties? Finally, the variance of the spectral estimate obtained through the Blackman/Tukey algorithm is analyzed in greater detail; the variance is shown to diverge for α ≥ 1 in an assumed power spectrum of k/|f|^α, unless the assumed spectrum is "truncated".