Dispersion relation for electron waves propagating in an isotropic plasma containing Maxwellian and suprathermal electrons

The paper discusses the dispersion relation for longitudinal electron waves propagating in a collisionless, homogeneous isotropic plasma, which contains both Maxwellian and suprathermal electrons. I t is found that the dispersion curve, known to have two separate branches for zero suprathermal energy spread,depends sensitively on this quantity. As the energy half-width of the suprathermal population increases, the branches approach each other until they touch at a connexion point, for a small critical value of that half-width. The topology of the dispersion curves is different for half-widths above and below critical; and this can affect the use of wave-propagation measurements as a diagnostic technique for the determination of the electron distribution function. Both the distance between the branches and spatial damping near the connexion frequency depend on the half-width, if below critical, and can be used to determine it. The theory is applied to experimental data.

Non-Maxwellian electron distributions in time-dependent simulations of low-Z materials illuminated by a high-intensity X-ray laser

The interaction of high intensity X-ray lasers with matter is modeled. A collisional-radiative timedependent module is implemented to study radiation transport in matter from ultrashort and ultraintense X-ray bursts. Inverse bremsstrahlung absorption by free electrons, electron conduction or hydrodynamic effects are not considered. The collisional-radiative system is coupled with the electron distribution evolution treated with a Fokker-Planck approach with additional inelastic terms. The model includes spontaneous emission, resonant photoabsorption, collisional excitation and de-excitation, radiative recombination, photoionization, collisional ionization, three-body recombination, autoionization and dielectronic capture. It is found that for high densities, but still below solid, collisions play an important role and thermalization times are not short enough to ensure a thermal electron distribution. At these densities Maxwellian and non-Maxwellian electron distribution models yield substantial differences in collisional rates, modifying the atomic population dynamics.

Modelización de las propiedades radiativas e interacción de láseres ultraintensos con la materia

Desde el año 2004 el código ARWEN ha sido utilizado con éxito para simular y diseñar experimentos relacionados con blancos para fusión por confinamiento inercial [146], astrofísica de laboratorio [145], plasmas como amplificadores de láseres de rayos X [107] o plasmas creados por láser para la medición de espectros de transmisión. Para la realización de estas simulaciones es necesario, además de métodos de alto orden precisos y que presenten buenas propiedades conservativas, conocer ciertas propiedades de los plasmas. En el caso de la fluidodinámica y la conducción electrónica necesitaremos conocer la ecuación de estado [94, 49, 36], y para el transporte de la radiación será preciso disponer de los datos de absorción y emisión [104, 95, 40]. Hasta el año 2009 ARWEN dependía de códigos externos para la generación de estas tablas de opacidad, careciendo de control sobre los métodos empleados para su generación. Además estos códigos asumían equilibrio local termodinámico (LTE), limitando su validez a rangos de alta densidad y baja temperatura. En el marco de esta tesis se ha desarrollado el código BIGBART para la generación de tablas detalladas de opacidad y emisividad para su uso en el módulo de transporte de radiación. De esta forma el grupo dispondrá de su propia herramienta de generación de propiedades radiativas. El código desarrollado es capaz de tratar plasmas en estado fuera de equilibrio (non-LTE) mediante el modelo colisional-radiativo, extendiendo así el rango de validez de las tablas generadas. El trabajo desarrollado para implementar un código LTE/non-LTE estacionario es el siguiente Cálculo de estructura y datos atómicos. Se ha acoplado en código FAC a BIGBART, incorporando la capacidad para generar potenciales atómicos para una configuración y el cálculo de funciones de onda de electrones en orbitales ligados y libres. Aproximaciones y métodos para la obtención de tasas y secciones eficaces de procesos. Se han incluido y programado los modelos implementados en FAC para el cálculo de secciones eficaces de fotoionización, y tasas de decaimiento de emisión espontánea y autoionización. Además se ha incluido el modelo Plane-Wave Born (PWBA) para el cálculo de las secciones eficaces de ionización y excitación colisional. Modelos para la obtención de la distribución de estados iónicos dentro del plasma. Se ha programado un solver LTE basado en la ecuación de Saha-Boltzmann con efectos de ionización por presión debida a los iones adyacentes. También se ha implementado un modelo non-LTE colisionalradiativo para la resolución del sistema de ecuaciones que nos permite obtener la densidad de estados iónicos fuera de equilibrio. Modelo non-LTE RADIOM. Se ha implementado el modelo RADIOM para aproximar efectos de no-equilibrio mediante cálculos LTE a una temperatura equivalente, menor o igual que la temperatura electrónica real. Cálculo de las propiedades espectrales de absorción y emisión. Se han implementado los modelos para el cálculo de los perfiles espectrales de absorción y emisión para procesos entre niveles ligados, ligado-libre y librelibre. Aprovechando el trabajo realizado en este sentido, durante el transcurso de esta tesis se amplió el código BIGBART para tratar problemas con dependencia temporal. La extensión para tratar este tipo de problemas se orientó a la simulación numérica de la interacción de láseres ultra intensos en el rango XUV/rayos X. Para ello, además de adaptar el modelo non-LTE colisionalradiativo se incluyeron procesos adicionales asociados a la interacción de la materia con fotones altamente energéticos. También se han incluido modelos para el cálculo de las propiedades ópticas, y por ende las propiedades dieléctricas de la materia irradiada, de gran interés en algunas aplicaciones novedosas de estos láseres intensos. Debido a la naturaleza fuertemente fuera de equilibrio en la interacción de fotones de alta energía con la materia, se incluyó el tratamiento de la distribución de electrones libres fuera de equilibrio en la aproximación de Fokker-Planck, tanto para condiciones degeneradas como no degeneradas. El trabajo desarrollado en el código non-LTE con dependencia temporal es el siguiente Procesos asociados a láseres intensos XUV/rayos X. Se ha implementado el cálculo de procesos radiativos estimulados de absorción y emisión por el láser. También se han incluido procesos asociados a la creación de vacantes en capas internas electrónicas (Shake), además de doble autoionización y doble fotoionización. Cálculo de propiedades ópticas y dieléctricas en blancos sólidos. Se ha implementado un modelo para la absorción por bremsstrahlung inverso en blancos en estado sólido. Con el coeficiente de extinción debido a procesos de fotoabsorción resonante, fotoionización y bremsstrahlung inverso se obtiene el ´ındice de refracción mediante la relación de Kronig-Kramers. Electrones fuera de equilibrio. Se ha tratado la evolución de la distribución de electrones, cuando no está justificado asumir que es Maxwelliana o de Fermi-Dirac, mediante la aproximación de Fokker-Planck para la colisión entre electrones libres. En la resolución de la ecuación de Fokker-Planck se han incluido los procesos inelásticos por colisiones con iones y términos fuente por interacción con el láser y otros procesos. ABSTRACT Since 2004 the ARWEN code has been successfully used to simulate and design targets for inertial confinement fusion experiments [146], laboratory astrophysics [145], plasmas as X-ray lasers amplifiers [107] or laser created plasmas for measuring transmission spectra. To perform these simulations it is necessary, in addition to high order precise methods with good conservative properties, to know certain properties of plasmas. For fluid dynamic and electronic conduction we need to know the equation of state [94, 49, 36], and for radiation transport it will be necessary to have the data of the absorption and emission [104, 95, 40]. Until 2009 ARWEN depended on external codes to generate these opacity tables, lacking of control over the methods used for their generation. Besides, these codes assumed local thermodynamic equilibrium (LTE), limiting their validity ranges to high densities and low temperatures. As part of this thesis it has been developed the BIGBART code for generating detailed opacity and emissivity tables for use in the radiation transport module. This group will have its own tool for the generation of radiative properties. The developed code is capable of treating plasmas out of equilibrium (non-LTE) by means of a collisional-radiative model, extending the range of validity of the generated tables. The work to implement an LTE/non-LTE steady-state code is as follows Calculation of structure and atomic data. the FAC code was coupled to BIGBART, incorporating the ability to generate atomic potentials for calculating configuration wave functions for bound and free electrons. Approaches and methods for obtaining cross sections and processes rates. We have included and reprogrammed in Fortran the models implemented in FAC for calculation of photoionization cross sections and decay rates of spontaneous emission and autoionization. We also included the Plane- Wave Born (PWBA) model to calculate the cross sections of ionization and collisional excitation. Models for the obtention of the distribution of ionic states within the plasma. We programmed a LTE solver based on the Saha-Boltzmann equation with pressure ionization effects due to adjacent ions. It has also been implemented a non-LTE collisional-radiative model for solving the system of equations that allows us to obtain the density of ionic states out of equilibrium. Non-LTE RADIOM model. We have implemented the non-LTE RADIOM model to approximate non-equilibrium effects with LTE data at an equivalent temperature, lower or equal to the actual electronic temperature. Calculation of the spectral absorption and emission properties. Models have been implemented for the calculation of the spectral profiles of absorption and emission processes between bound levels, free-bound and free-free. Taking advantage of the work done in this direction throughout the course of this thesis the code BIGBART was extended to treat time-dependent problems. The extension to treat such problems is oriented to the numerical simulation of the interaction of ultra intense lasers in the XUV/X-ray range. For this range, in addition to adapting the non-LTE collisional-radiative model, additional processes associated with the interaction of matter with high energy photons. We also included models for calculation of the optical properties, and therefore the dielectric properties of the irradiated material, of great interest in some novel applications of these intense lasers. Due to the strong non-equilibrium nature of the interaction of high energy photons with matter, we included the treatment of the distribution of free electrons out of equilibrium in the Fokker-Planck approximation for both degenerate and non-degenerate conditions. The work in the non-LTE time-dependent code is as follows Processes associated with intense XUV/X-ray lasers. We have implemented the calculation of stimulated radiative processes in absorption and emission. Also we included processes associated with the creation of electronic vacancies in inner shells (Shake), double autoionization and double photoionization. Calculation of optical and dielectric properties in solid targets. We have implemented a model for inverse bremsstrahlung absorption in solid targets. With the extinction coefficient from resonant photoabsorption, photoionization and inverse bremsstrahlung the refractive index is obtained by the Kramers-Kronig relation. Electrons out of equilibrium. We treat the evolution of the electron distribution, when it is not justified to assume a Maxwellian or Fermi-Dirac distribution, by the Fokker-Planck approximation for collisions between electrons. When solving the Fokker-Planck equation we included inelastic collision processes with ions and source terms by interaction with the laser and other processes.

Three-dimensional spatial distribution of synapses in the neocortex: A dual-beam electron microscopy study

In the cerebral cortex, most synapses are found in the neuropil, but relatively little is known about their 3-dimensional organization. Using an automated dual-beam electron microscope that combines focused ion beam milling and scanning electron microscopy, we have been able to obtain 10 three-dimensional samples with an average volume of 180 µm(3) from the neuropil of layer III of the young rat somatosensory cortex (hindlimb representation). We have used specific software tools to fully reconstruct 1695 synaptic junctions present in these samples and to accurately quantify the number of synapses per unit volume. These tools also allowed us to determine synapse position and to analyze their spatial distribution using spatial statistical methods. Our results indicate that the distribution of synaptic junctions in the neuropil is nearly random, only constrained by the fact that synapses cannot overlap in space. A theoretical model based on random sequential absorption, which closely reproduces the actual distribution of synapses, is also presented.

Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.

Enhanced thermionic currents by non equilibrium electron population of metals

An analytical expression is derived for the electron thermionic current from heated metals by using a non equilibrium, modified Kappa energy distribution for electrons. This isotropic distribution characterizes the long high energy tails in the electron energy spectrum for low values of the index ? and also accounts for the Fermi energy for the metal electrons. The limit for large ? recovers the classical equilibrium Fermi-Dirac distribution. The predicted electron thermionic current for low ? increases between four and five orders of magnitude with respect to the predictions of the equilibrium Richardson-Dushmann current. The observed departures from this classical expression, also recovered for large ?, would correspond to moderate values of this index. The strong increments predicted by the thermionic emission currents suggest that, under appropriate conditions, materials with non equilibrium electron populations would become more efficient electron emitters at low temperatures.

Direct Vlasov simulations of electron-attracting cylindrical Langmuir probes in flowing plasmas

Current collection by positively polarized cylindrical Langmuir probes immersed in flowing plasmas is analyzed using a non-stationary direct Vlasov-Poisson code. A detailed description of plasma density spatial structure as a function of the probe-to-plasma relative velocity U is presented. Within the considered parametric domain, the well-known electron density maximum close to the probe is weakly affected by U. However, in the probe wake side, the electron density minimum becomes deeper as U increases and a rarified plasma region appears. Sheath radius is larger at the wake than at the front side. Electron and ion distribution functions show specific features that are the signature of probe motion. In particular, the ion distribution function at the probe front side exhibits a filament with positive radial velocity. It corresponds to a population of rammed ions that were reflected by the electric field close to the positively biased probe. Numerical simulations reveal that two populations of trapped electrons exist: one orbiting around the probe and the other with trajectories confined at the probe front side. The latter helps to neutralize the reflected ions, thus explaining a paradox in past probe theory.

Three-dimensional distribution of cortical synapses: a replicated point pattern-based analysis

The biggest problem when analyzing the brain is that its synaptic connections are extremely complex. Generally, the billions of neurons making up the brain exchange information through two types of highly specialized structures: chemical synapses (the vast majority) and so-called gap junctions (a substrate of one class of electrical synapse). Here we are interested in exploring the three-dimensional spatial distribution of chemical synapses in the cerebral cortex. Recent research has showed that the three-dimensional spatial distribution of synapses in layer III of the neocortex can be modeled by a random sequential adsorption (RSA) point process, i.e., synapses are distributed in space almost randomly, with the only constraint that they cannot overlap. In this study we hypothesize that RSA processes can also explain the distribution of synapses in all cortical layers. We also investigate whether there are differences in both the synaptic density and spatial distribution of synapses between layers. Using combined focused ion beam milling and scanning electron microscopy (FIB/SEM), we obtained three-dimensional samples from the six layers of the rat somatosensory cortex and identified and reconstructed the synaptic junctions. A total volume of tissue of approximately 4500μm3 and around 4000 synapses from three different animals were analyzed. Different samples, layers and/or animals were aggregated and compared using RSA replicated spatial point processes. The results showed no significant differences in the synaptic distribution across the different rats used in the study. We found that RSA processes described the spatial distribution of synapses in all samples of each layer. We also found that the synaptic distribution in layers II to VI conforms to a common underlying RSA process with different densities per layer. Interestingly, the results showed that synapses in layer I had a slightly different spatial distribution from the other layers.

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates

We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 112̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.