Free-Form, High Energy Performance, Transparent Vacuum Envelope

El artículo examina un nuevo sistema envolvente ligero, delgado, con ahorro energético, libre de formas diseñado para su uso en proyectos de arquitectura.

On the structure of the floating zone in melting

Floating zone melting is used in crystal growth and purification of high melting materials. The use of a reduced gravity environment will remove the constraint imposed on the length of the zone by the hydrostatic pressure. The equilibrium of the fioatmg zone may involve, (1)Hydrostatic forces, when the zone rotates as a whole. (2)Convective driving forces, when the zone is stationary but fluid property gradients appear.(3) Hydrodynamic forces, when some parts of the zone are set into motion with respect to others. The last effects are considered in this paper. The flow pattern of a floating zone held between two discs in relative motion is complicated, and thence the solution of the problem is difficult even assuming a constant property-newtonian liquid Nevertheless, when a small parameter appears m the problem, the complete flow field can be split into zones where simple solutions are found. To illustrate this approach, the spin up from rest of an initially cylindrical floating zone is considered with detail. Here the small parameter is the time elapsed from the impulsive starting of motion. Since the problem which has been considered, as well as some others which can be tackled by use of similar methods, concern the viscous layer close to either plate, they can be simulated experimentally in the ground laboratory with short floating zones. Procedures to produce these zones are indicated.

Mechanical Degradation of Tungsten Alloys at Extreme Temperatures in Vacuum and Oxidation Atmospheres

Mechanical degradation of tungsten alloys at extreme temperatures in vacuum and oxidation atmospheres.

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.