Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

The luminescence properties of InxAl1−xN/GaN heterostructures are investigated systematically as a function of the In content (x = 0.067 − 0.208). The recombination between electrons confined in the two-dimensional electron gas and free holes in the GaN template is identified and analyzed. We find a systematic shift of the recombination with increasing In content from about 80 meV to only few meV below the GaN exciton emission. These results are compared with model calculations and can be attributed to the changing band profile and originating from the polarization gradient between InAlN and GaN.

Dispersion relation for electron waves propagating in an isotropic plasma containing Maxwellian and suprathermal electrons

The paper discusses the dispersion relation for longitudinal electron waves propagating in a collisionless, homogeneous isotropic plasma, which contains both Maxwellian and suprathermal electrons. I t is found that the dispersion curve, known to have two separate branches for zero suprathermal energy spread,depends sensitively on this quantity. As the energy half-width of the suprathermal population increases, the branches approach each other until they touch at a connexion point, for a small critical value of that half-width. The topology of the dispersion curves is different for half-widths above and below critical; and this can affect the use of wave-propagation measurements as a diagnostic technique for the determination of the electron distribution function. Both the distance between the branches and spatial damping near the connexion frequency depend on the half-width, if below critical, and can be used to determine it. The theory is applied to experimental data.

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.