Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.